InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

Dagmar Gregušová, Lajos Tóth, Ondrej Pohorelec, Stanislav Hasenöhrl, Štefan Haščík, Ildikó Cora, Zsolt Fogarassy, Roman Stoklas, Alena Seifertová, Michal Blaho, Agáta Laurenčíková, Tatsuya Oyobiki, Béla Pécz, Tamotsu Hashizume, Ján Kuzmík

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Abstract

The proposal and processing aspects of the prove-of-concept InGaN/GaN/AlGaN/GaN metal-oxide-semiconductor (MOS) high-electron mobility transistor with etched access regions are addressed. Full strain and decent quality of the epitaxial system comprising 4 nm In0.16Ga0.84N/3 nm GaN/5 nm Al0.27Ga0.73N are observed using a high-resolution transmission-electron microscopy and by deformation profile extractions. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, while free electrons are populated at access regions after etching. Consecutive passivation by 10 nm Al2O3 together with annealing at 300 °C improved the Al2O3/semiconductor interface, with the threshold voltage (V T) reaching 1 V. Improvements of the present concept in comparison to the previous one with a gate recess were proved by showing the decreased drain leakage current and increased breakdown voltage.

Original languageEnglish
Article numberSCCD21
JournalJapanese Journal of Applied Physics
Volume58
Issue numberSC
DOIs
Publication statusPublished - Jan 1 2019

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., & Kuzmík, J. (2019). InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. Japanese Journal of Applied Physics, 58(SC), [SCCD21]. https://doi.org/10.7567/1347-4065/ab06b8