Infrared divergence and Scher-Montroll model for transient electrical transport in amorphous semiconductors

A. Lőrincz, F. Beleznay

Research output: Contribution to journalArticle

Abstract

The Scher-Montroll model of transport in amorphous semiconductors is treated in the presence of very low energy excitations of infrared divergent nature. The discrepancy between temperature dependence of transit time given by time-of-flight experiments and other methods can be resolved in this way. It is shown that infrared divergent scattering without a wide distribution of transition rates results in a temperature dependence which is different from the experimentally observed one.

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalSolid State Communications
Volume44
Issue number2
DOIs
Publication statusPublished - Oct 1982

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Infrared divergence and Scher-Montroll model for transient electrical transport in amorphous semiconductors'. Together they form a unique fingerprint.

  • Cite this