Influence of tunneling voltage on the imaging of carbon nanotube rafts by scanning tunneling microscopy

L. Bíró, P. A. Thiry, Ph Lambin, C. Journet, P. Bernier, A. A. Lucas

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The influence of bias voltage on the quality of scanning tunneling microscopy images of carbon nanotube "rafts" was investigated in the range from -1 to 1 V in combination with scanning tunneling spectroscopy (STS) measurements. While for positive tip polarity only a slight voltage dependence was found in the image quality, for negative polarity a strong increase of the noise was observed with increasing voltage. STS showed that, for negative tip polarity, the tunneling current may be different in different locations by several orders of magnitude.

Original languageEnglish
Pages (from-to)3680-3682
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number25
DOIs
Publication statusPublished - 1998

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rafts
scanning tunneling microscopy
polarity
carbon nanotubes
electric potential
scanning
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Influence of tunneling voltage on the imaging of carbon nanotube rafts by scanning tunneling microscopy. / Bíró, L.; Thiry, P. A.; Lambin, Ph; Journet, C.; Bernier, P.; Lucas, A. A.

In: Applied Physics Letters, Vol. 73, No. 25, 1998, p. 3680-3682.

Research output: Contribution to journalArticle

Bíró, L. ; Thiry, P. A. ; Lambin, Ph ; Journet, C. ; Bernier, P. ; Lucas, A. A. / Influence of tunneling voltage on the imaging of carbon nanotube rafts by scanning tunneling microscopy. In: Applied Physics Letters. 1998 ; Vol. 73, No. 25. pp. 3680-3682.
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