Influence of surface roughness on interdiffusion processes in InGaP/Ge heteroepitaxial thin films

P. Joice Sophia, G. Attolini, M. Bosi, E. Buffagni, C. Ferrari, C. Frigeri, K. Vad, A. Csík, V. Takáts, Z. Zolnai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In the present work, we report on the study of InGaP/Ge heterojunctions grown by metal organic vapor phase epitaxy at different growth temperatures, with the aim of analyzing properties of the layer and interface between InGaP epilayer and germanium substrate. Secondary Neutral Mass Spectroscopy, Rutherford Backscattering Spectrometry, High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy have been used to characterize the layers. The main goal of this work is to get information about diffusion processes of Ga, In, P in the substrate and of Ge in the epitaxial film. Since the interface roughness during sputtering and the effect of diffusion depends on the growth temperature, depth profiles measured experimentally were combined with surface roughness data in order to get more reliable information about diffusion profiles and the real depth distribution of elements in the interface.

Original languageEnglish
Pages (from-to)P53-P56
JournalECS Journal of Solid State Science and Technology
Volume4
Issue number3
DOIs
Publication statusPublished - 2015

Fingerprint

Surface roughness
Growth temperature
Thin films
Germanium
Vapor phase epitaxy
Epilayers
Epitaxial films
Rutherford backscattering spectroscopy
Substrates
Spectrometry
Sputtering
Heterojunctions
Atomic force microscopy
Metals
Transmission electron microscopy
X ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Influence of surface roughness on interdiffusion processes in InGaP/Ge heteroepitaxial thin films. / Sophia, P. Joice; Attolini, G.; Bosi, M.; Buffagni, E.; Ferrari, C.; Frigeri, C.; Vad, K.; Csík, A.; Takáts, V.; Zolnai, Z.

In: ECS Journal of Solid State Science and Technology, Vol. 4, No. 3, 2015, p. P53-P56.

Research output: Contribution to journalArticle

Sophia, P. Joice ; Attolini, G. ; Bosi, M. ; Buffagni, E. ; Ferrari, C. ; Frigeri, C. ; Vad, K. ; Csík, A. ; Takáts, V. ; Zolnai, Z. / Influence of surface roughness on interdiffusion processes in InGaP/Ge heteroepitaxial thin films. In: ECS Journal of Solid State Science and Technology. 2015 ; Vol. 4, No. 3. pp. P53-P56.
@article{cde374fb1bae4d1d82b092802b911420,
title = "Influence of surface roughness on interdiffusion processes in InGaP/Ge heteroepitaxial thin films",
abstract = "In the present work, we report on the study of InGaP/Ge heterojunctions grown by metal organic vapor phase epitaxy at different growth temperatures, with the aim of analyzing properties of the layer and interface between InGaP epilayer and germanium substrate. Secondary Neutral Mass Spectroscopy, Rutherford Backscattering Spectrometry, High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy have been used to characterize the layers. The main goal of this work is to get information about diffusion processes of Ga, In, P in the substrate and of Ge in the epitaxial film. Since the interface roughness during sputtering and the effect of diffusion depends on the growth temperature, depth profiles measured experimentally were combined with surface roughness data in order to get more reliable information about diffusion profiles and the real depth distribution of elements in the interface.",
author = "Sophia, {P. Joice} and G. Attolini and M. Bosi and E. Buffagni and C. Ferrari and C. Frigeri and K. Vad and A. Cs{\'i}k and V. Tak{\'a}ts and Z. Zolnai",
year = "2015",
doi = "10.1149/2.0021503jss",
language = "English",
volume = "4",
pages = "P53--P56",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "3",

}

TY - JOUR

T1 - Influence of surface roughness on interdiffusion processes in InGaP/Ge heteroepitaxial thin films

AU - Sophia, P. Joice

AU - Attolini, G.

AU - Bosi, M.

AU - Buffagni, E.

AU - Ferrari, C.

AU - Frigeri, C.

AU - Vad, K.

AU - Csík, A.

AU - Takáts, V.

AU - Zolnai, Z.

PY - 2015

Y1 - 2015

N2 - In the present work, we report on the study of InGaP/Ge heterojunctions grown by metal organic vapor phase epitaxy at different growth temperatures, with the aim of analyzing properties of the layer and interface between InGaP epilayer and germanium substrate. Secondary Neutral Mass Spectroscopy, Rutherford Backscattering Spectrometry, High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy have been used to characterize the layers. The main goal of this work is to get information about diffusion processes of Ga, In, P in the substrate and of Ge in the epitaxial film. Since the interface roughness during sputtering and the effect of diffusion depends on the growth temperature, depth profiles measured experimentally were combined with surface roughness data in order to get more reliable information about diffusion profiles and the real depth distribution of elements in the interface.

AB - In the present work, we report on the study of InGaP/Ge heterojunctions grown by metal organic vapor phase epitaxy at different growth temperatures, with the aim of analyzing properties of the layer and interface between InGaP epilayer and germanium substrate. Secondary Neutral Mass Spectroscopy, Rutherford Backscattering Spectrometry, High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy have been used to characterize the layers. The main goal of this work is to get information about diffusion processes of Ga, In, P in the substrate and of Ge in the epitaxial film. Since the interface roughness during sputtering and the effect of diffusion depends on the growth temperature, depth profiles measured experimentally were combined with surface roughness data in order to get more reliable information about diffusion profiles and the real depth distribution of elements in the interface.

UR - http://www.scopus.com/inward/record.url?scp=84923368431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923368431&partnerID=8YFLogxK

U2 - 10.1149/2.0021503jss

DO - 10.1149/2.0021503jss

M3 - Article

VL - 4

SP - P53-P56

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 3

ER -