Influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs

P. M. Koenraad, I. Bársony, A. F W van der Stadt, J. A A J Perenboom, J. H. Wolter

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

We have studied the transport properties of the 2DEG in annealed Si-δ-doped GaAs structures. The diffusion rate of the Si atoms was obtained from the temperature dependence of the subband population. In sampleswith a large self-compensation we find that the electron density increases after annealing at temperatures below 800 °C. After annealing at temperatures above 800 °C we find a reduction of the electron concentration of the 2 Dimensional Electron Gas (2DEG). Our results showed that after annealing the quantum mobility in the lowest subband increases a little but that the quantum mobility in the higher subbands decreases strongly.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages663-668
Number of pages6
Volume143-4
Editionpt 1
Publication statusPublished - 1994
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

Other

OtherProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)
CityGmunden, Austria
Period7/18/937/23/93

Fingerprint

Electron transport properties
Electron gas
Silicon
Annealing
Temperature
Carrier concentration
Atoms
Electrons
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Koenraad, P. M., Bársony, I., Stadt, A. F. W. V. D., Perenboom, J. A. A. J., & Wolter, J. H. (1994). Influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs. In Materials Science Forum (pt 1 ed., Vol. 143-4, pp. 663-668). Trans Tech Publ.

Influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs. / Koenraad, P. M.; Bársony, I.; Stadt, A. F W van der; Perenboom, J. A A J; Wolter, J. H.

Materials Science Forum. Vol. 143-4 pt 1. ed. Trans Tech Publ, 1994. p. 663-668.

Research output: Chapter in Book/Report/Conference proceedingChapter

Koenraad, PM, Bársony, I, Stadt, AFWVD, Perenboom, JAAJ & Wolter, JH 1994, Influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs. in Materials Science Forum. pt 1 edn, vol. 143-4, Trans Tech Publ, pp. 663-668, Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3), Gmunden, Austria, 7/18/93.
Koenraad PM, Bársony I, Stadt AFWVD, Perenboom JAAJ, Wolter JH. Influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs. In Materials Science Forum. pt 1 ed. Vol. 143-4. Trans Tech Publ. 1994. p. 663-668
Koenraad, P. M. ; Bársony, I. ; Stadt, A. F W van der ; Perenboom, J. A A J ; Wolter, J. H. / Influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs. Materials Science Forum. Vol. 143-4 pt 1. ed. Trans Tech Publ, 1994. pp. 663-668
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