Abstract
We have studied the transport properties of the 2DEG in annealed Si-δ-doped GaAs structures. The diffusion rate of the Si atoms was obtained from the temperature dependence of the subband population. In sampleswith a large self-compensation we find that the electron density increases after annealing at temperatures below 800 °C. After annealing at temperatures above 800 °C we find a reduction of the electron concentration of the 2 Dimensional Electron Gas (2DEG). Our results showed that after annealing the quantum mobility in the lowest subband increases a little but that the quantum mobility in the higher subbands decreases strongly.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publ |
| Pages | 663-668 |
| Number of pages | 6 |
| Volume | 143-4 |
| Edition | pt 1 |
| Publication status | Published - 1994 |
| Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993 |
Other
| Other | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) |
|---|---|
| City | Gmunden, Austria |
| Period | 7/18/93 → 7/23/93 |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
Influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs. / Koenraad, P. M.; Bársony, I.; Stadt, A. F W van der; Perenboom, J. A A J; Wolter, J. H.
Materials Science Forum. Vol. 143-4 pt 1. ed. Trans Tech Publ, 1994. p. 663-668.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs
AU - Koenraad, P. M.
AU - Bársony, I.
AU - Stadt, A. F W van der
AU - Perenboom, J. A A J
AU - Wolter, J. H.
PY - 1994
Y1 - 1994
N2 - We have studied the transport properties of the 2DEG in annealed Si-δ-doped GaAs structures. The diffusion rate of the Si atoms was obtained from the temperature dependence of the subband population. In sampleswith a large self-compensation we find that the electron density increases after annealing at temperatures below 800 °C. After annealing at temperatures above 800 °C we find a reduction of the electron concentration of the 2 Dimensional Electron Gas (2DEG). Our results showed that after annealing the quantum mobility in the lowest subband increases a little but that the quantum mobility in the higher subbands decreases strongly.
AB - We have studied the transport properties of the 2DEG in annealed Si-δ-doped GaAs structures. The diffusion rate of the Si atoms was obtained from the temperature dependence of the subband population. In sampleswith a large self-compensation we find that the electron density increases after annealing at temperatures below 800 °C. After annealing at temperatures above 800 °C we find a reduction of the electron concentration of the 2 Dimensional Electron Gas (2DEG). Our results showed that after annealing the quantum mobility in the lowest subband increases a little but that the quantum mobility in the higher subbands decreases strongly.
UR - http://www.scopus.com/inward/record.url?scp=0028602431&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028602431&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:0028602431
VL - 143-4
SP - 663
EP - 668
BT - Materials Science Forum
PB - Trans Tech Publ
ER -