Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon

L. Bíró, J. Gyulai, N. Q. Khanh, P. Tütto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low dose irradiation with 4 MeV protons was used for lifetime modification in Si. The depth dependence of the induced effect was investigated by Microwave Photoconductive Decay (μ-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on lifetime caused by implantation defects and by carrier diffusion in the undamaged Si underneath. Limits are given when μ-PCD is applied to measure lifetime changes set by deep implants.

Original languageEnglish
Pages (from-to)173-176
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume112
Issue number1-4
Publication statusPublished - May 1996

Fingerprint

Carrier lifetime
Silicon
carrier lifetime
Ion implantation
Dosimetry
Protons
implantation
Microwaves
Irradiation
life (durability)
Defects
protons
silicon
microwaves
dosage
irradiation
defects
decay

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

@article{83fe7ba8e49d46fda56bfdce40e2b339,
title = "Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon",
abstract = "Low dose irradiation with 4 MeV protons was used for lifetime modification in Si. The depth dependence of the induced effect was investigated by Microwave Photoconductive Decay (μ-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on lifetime caused by implantation defects and by carrier diffusion in the undamaged Si underneath. Limits are given when μ-PCD is applied to measure lifetime changes set by deep implants.",
author = "L. B{\'i}r{\'o} and J. Gyulai and Khanh, {N. Q.} and P. T{\"u}tto",
year = "1996",
month = "5",
language = "English",
volume = "112",
pages = "173--176",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon

AU - Bíró, L.

AU - Gyulai, J.

AU - Khanh, N. Q.

AU - Tütto, P.

PY - 1996/5

Y1 - 1996/5

N2 - Low dose irradiation with 4 MeV protons was used for lifetime modification in Si. The depth dependence of the induced effect was investigated by Microwave Photoconductive Decay (μ-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on lifetime caused by implantation defects and by carrier diffusion in the undamaged Si underneath. Limits are given when μ-PCD is applied to measure lifetime changes set by deep implants.

AB - Low dose irradiation with 4 MeV protons was used for lifetime modification in Si. The depth dependence of the induced effect was investigated by Microwave Photoconductive Decay (μ-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on lifetime caused by implantation defects and by carrier diffusion in the undamaged Si underneath. Limits are given when μ-PCD is applied to measure lifetime changes set by deep implants.

UR - http://www.scopus.com/inward/record.url?scp=0030563376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030563376&partnerID=8YFLogxK

M3 - Article

VL - 112

SP - 173

EP - 176

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -