Low dose irradiation with 4 MeV protons was used for lifetime modification in Si. The depth dependence of the induced effect was investigated by Microwave Photoconductive Decay (μ-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on lifetime caused by implantation defects and by carrier diffusion in the undamaged Si underneath. Limits are given when μ-PCD is applied to measure lifetime changes set by deep implants.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - May 1996|
ASJC Scopus subject areas
- Nuclear and High Energy Physics