Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon

L. P. Biró, J. Gyulai, N. Q. Khanh, P. Tütto

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Abstract

Low dose irradiation with 4 MeV protons was used for lifetime modification in Si. The depth dependence of the induced effect was investigated by Microwave Photoconductive Decay (μ-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on lifetime caused by implantation defects and by carrier diffusion in the undamaged Si underneath. Limits are given when μ-PCD is applied to measure lifetime changes set by deep implants.

Original languageEnglish
Pages (from-to)173-176
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume112
Issue number1-4
DOIs
Publication statusPublished - May 1996

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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