Influence of microwave plasma parameters on light emission from SiV color centers in nanocrystalline diamond films

László Himics, S. Tóth, M. Veres, Péter Csíkvári, M. Koós

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Zero phonon line (ZPL) shape, position and integral intensity of SiV defect center in diamond is presented for nanocrystalline diamond (NCD) films grown at different conditions, NCD films of average grain sizes from ∼50 nm up to ∼180 nm have been deposited onto c-Si wafer at substrate temperature of 700 and 850°C from mixture with different CH4and H2ratios using MWCVD process. Light emission of SiV defect center and Raman scattering properties of NCD samples were measured on a Renishaw micro-Raman spectrometer with 488 nm excitation. Scanning electron microscopy images were used for monitoring surface morphology and for the analysis of the average grain sizes. Sample thickness was determined by in situ laser reflection interferometry. Characteristics of SiV ZPL are discussed in light of the morphology, bonding structure and average grain size of NCD films.

Original languageEnglish
Pages (from-to)263-269
Number of pages7
JournalOpen Chemistry
Volume13
Issue number1
DOIs
Publication statusPublished - Jul 1 2015

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Keywords

  • MW CVD
  • Nanocrystalline diamond
  • Photoluminescence
  • Raman scattering
  • SiV color center

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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