Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates

A. Georgakilas, M. Androulidaki, K. Tsagaraki, K. Amimer, G. Constantinidis, N. T. Pelekanos, M. Calamiotou, Zs Czigany, B. Pecz

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Cubic GaN layers have been grown by rf-plasma source Molecular Beam Epitaxy (MBE) directly on vicinal (100) GaAs substrates, misoriented by 2° toward [001], without using an incident As beam during oxide desorption or the following stages of growth. Step-flow growth mechanism and step bunching increasing with the growth temperature (TG), characterized the surfaces. A room temperature photoluminescence peak at 3.216 eV with 58 meV linewidth was obtained for TG = 630 °C.

Original languageEnglish
Pages (from-to)525-528
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
Publication statusPublished - Nov 1 1999
EventProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
Duration: Jul 4 1999Jul 9 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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