Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates

A. Georgakilas, M. Androulidaki, K. Tsagaraki, K. Amimer, G. Constantinidis, N. T. Pelekanos, M. Calamiotou, Z. Czigány, B. Pécz

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Cubic GaN layers have been grown by rf-plasma source Molecular Beam Epitaxy (MBE) directly on vicinal (100) GaAs substrates, misoriented by 2° toward [001], without using an incident As beam during oxide desorption or the following stages of growth. Step-flow growth mechanism and step bunching increasing with the growth temperature (TG), characterized the surfaces. A room temperature photoluminescence peak at 3.216 eV with 58 meV linewidth was obtained for TG = 630 °C.

Original languageEnglish
Pages (from-to)525-528
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
Publication statusPublished - Nov 1999

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Growth temperature
Molecular beam epitaxy
molecular beam epitaxy
Plasma sources
Substrates
Linewidth
Oxides
Desorption
Photoluminescence
bunching
temperature
desorption
photoluminescence
oxides
room temperature
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates. / Georgakilas, A.; Androulidaki, M.; Tsagaraki, K.; Amimer, K.; Constantinidis, G.; Pelekanos, N. T.; Calamiotou, M.; Czigány, Z.; Pécz, B.

In: Physica Status Solidi (A) Applied Research, Vol. 176, No. 1, 11.1999, p. 525-528.

Research output: Contribution to journalArticle

Georgakilas, A. ; Androulidaki, M. ; Tsagaraki, K. ; Amimer, K. ; Constantinidis, G. ; Pelekanos, N. T. ; Calamiotou, M. ; Czigány, Z. ; Pécz, B. / Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates. In: Physica Status Solidi (A) Applied Research. 1999 ; Vol. 176, No. 1. pp. 525-528.
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