Influence of lattice mismatch and growth rate on the decay of RHEED oscillation in the case of InGaAs/GaAs growth

Á Nemcsics, F. Riesz

Research output: Contribution to journalArticle

Abstract

The intensity decay of the oscillation of the reflection high-energy electron diffraction pattern's specular beam is analysed during the molecular beam epitaxy of strained InGaAs/GaAs heteroepitaxial structures. The oscillations' amplitude was found to decrease exponentially with time during the InGaAs growth. Further, the decay time constant decreases with InAs mole fraction, indicating that the lattice strain increases islanding during growth. A simple semi-quantitative model based on the growth front roughening is formulated to explain the results. Assuming that the oscillation decay is related partly to the strain and partly due to kinetic effects during growth, a decay component that is solely due to strain can be separated; we find that the onset of increased roughening due to the misfit strain component roughly corresponds to the equilibrium critical layer thickness for misfit dislocation generation.

Original languageEnglish
Pages (from-to)1011-1017
Number of pages7
JournalCrystal Research and Technology
Volume36
Issue number8-10
DOIs
Publication statusPublished - 2001

Fingerprint

Reflection high energy electron diffraction
Lattice mismatch
oscillations
decay
Dislocations (crystals)
Molecular beam epitaxy
high energy electrons
Diffraction patterns
time constant
molecular beam epitaxy
diffraction patterns
electron diffraction
Kinetics
gallium arsenide
kinetics

Keywords

  • InGaAs
  • RHEED
  • Strained growth

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Influence of lattice mismatch and growth rate on the decay of RHEED oscillation in the case of InGaAs/GaAs growth. / Nemcsics, Á; Riesz, F.

In: Crystal Research and Technology, Vol. 36, No. 8-10, 2001, p. 1011-1017.

Research output: Contribution to journalArticle

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AB - The intensity decay of the oscillation of the reflection high-energy electron diffraction pattern's specular beam is analysed during the molecular beam epitaxy of strained InGaAs/GaAs heteroepitaxial structures. The oscillations' amplitude was found to decrease exponentially with time during the InGaAs growth. Further, the decay time constant decreases with InAs mole fraction, indicating that the lattice strain increases islanding during growth. A simple semi-quantitative model based on the growth front roughening is formulated to explain the results. Assuming that the oscillation decay is related partly to the strain and partly due to kinetic effects during growth, a decay component that is solely due to strain can be separated; we find that the onset of increased roughening due to the misfit strain component roughly corresponds to the equilibrium critical layer thickness for misfit dislocation generation.

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