Influence of hydrogen on the structural stability of annealed ultrathin Si/Ge amorphous layers

C. Frigeri, L. Nasi, M. Serényi, A. Csik, Z. Erdélyi, D. L. Beke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The influence of hydrogen on the structural stability of multilayers made of ultrathin (3 nm) Si and Ge amorphous layers submitted to annealing to activate Si and Ge intermixing has been studied by TEM and AFM. By energy dispersive microanalysis the interdiffusion of Si and Ge has been observed. The Si/Ge multilayers, however, underwent remarkable structural degradation because of the formation of hydrogen bubbles which give rise to surface bumps and eventually craters when the bubbles blow up because of too high internal pressure in samples with high H content and annealed at high temperatures. The hydrogen forming the bubbles comes from the rupture of the Si-H and Ge-H bonds activated by the thermal energy of the annealing and by the energy released by the recombination of thermally generated electron hole pairs.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XIII
Subtitle of host publicationGADEST 2009
PublisherTrans Tech Publications Ltd
Pages325-330
Number of pages6
ISBN (Print)3908451744, 9783908451747
DOIs
Publication statusPublished - Jan 1 2009
Event13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 - Berlin, Germany
Duration: Sep 26 2009Oct 2 2009

Publication series

NameSolid State Phenomena
Volume156-158
ISSN (Print)1012-0394

Other

Other13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009
CountryGermany
CityBerlin
Period9/26/0910/2/09

Keywords

  • AFM
  • Amorphous
  • Annealing
  • Hydrogen
  • Si/Ge multilayers
  • TEM

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Frigeri, C., Nasi, L., Serényi, M., Csik, A., Erdélyi, Z., & Beke, D. L. (2009). Influence of hydrogen on the structural stability of annealed ultrathin Si/Ge amorphous layers. In Gettering and Defect Engineering in Semiconductor Technology XIII: GADEST 2009 (pp. 325-330). (Solid State Phenomena; Vol. 156-158). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.156-158.325