Influence of high density band tailing surface states on the MOSFET characteristics

Gy Pásztor, I. Bársony, M. Seres, P. Schván

Research output: Contribution to journalArticle

Abstract

A model is developed to calculate the influence of high density surface states on MOSFET characteristics. Two cases with and without band tailing states are compared at the same turn on voltage. Both drain saturation voltage and current are found to be change, and as an effect of band tailing states an apparent decrease in the mobility value of classical theory may be concluded. The results of computation are compared with measurements, and a good fit is found in a current range of nine orders of magnitude.

Original languageEnglish
Pages (from-to)689-694
Number of pages6
JournalSolid-State Electronics
Volume27
Issue number7
DOIs
Publication statusPublished - 1984

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Tailings
Surface states
field effect transistors
Electric potential
electric potential
saturation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Influence of high density band tailing surface states on the MOSFET characteristics. / Pásztor, Gy; Bársony, I.; Seres, M.; Schván, P.

In: Solid-State Electronics, Vol. 27, No. 7, 1984, p. 689-694.

Research output: Contribution to journalArticle

Pásztor, Gy ; Bársony, I. ; Seres, M. ; Schván, P. / Influence of high density band tailing surface states on the MOSFET characteristics. In: Solid-State Electronics. 1984 ; Vol. 27, No. 7. pp. 689-694.
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