Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC

M. Posselt, L. Bischoff, J. Teichert, A. Ster

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The effect of dose rate and temperature on the shape of Germanium (Ge) depth profiles in Si and SiC was discussed. Two widely different dose rates were applied by means of a focused ion-beam system. Secondary ion mass spectrometry was used to measure the Ge depth distributions. It was found that different mechanisms were responsible for the dynamic annealing in Si and SiC.

Original languageEnglish
Pages (from-to)1004-1013
Number of pages10
JournalJournal of Applied Physics
Volume93
Issue number2
DOIs
Publication statusPublished - Jan 15 2003

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germanium
implantation
dosage
annealing
profiles
secondary ion mass spectrometry
ion beams
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC. / Posselt, M.; Bischoff, L.; Teichert, J.; Ster, A.

In: Journal of Applied Physics, Vol. 93, No. 2, 15.01.2003, p. 1004-1013.

Research output: Contribution to journalArticle

Posselt, M. ; Bischoff, L. ; Teichert, J. ; Ster, A. / Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 2. pp. 1004-1013.
@article{86b60a543629423bacafb2ebe5d23704,
title = "Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC",
abstract = "The effect of dose rate and temperature on the shape of Germanium (Ge) depth profiles in Si and SiC was discussed. Two widely different dose rates were applied by means of a focused ion-beam system. Secondary ion mass spectrometry was used to measure the Ge depth distributions. It was found that different mechanisms were responsible for the dynamic annealing in Si and SiC.",
author = "M. Posselt and L. Bischoff and J. Teichert and A. Ster",
year = "2003",
month = "1",
day = "15",
doi = "10.1063/1.1533092",
language = "English",
volume = "93",
pages = "1004--1013",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC

AU - Posselt, M.

AU - Bischoff, L.

AU - Teichert, J.

AU - Ster, A.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - The effect of dose rate and temperature on the shape of Germanium (Ge) depth profiles in Si and SiC was discussed. Two widely different dose rates were applied by means of a focused ion-beam system. Secondary ion mass spectrometry was used to measure the Ge depth distributions. It was found that different mechanisms were responsible for the dynamic annealing in Si and SiC.

AB - The effect of dose rate and temperature on the shape of Germanium (Ge) depth profiles in Si and SiC was discussed. Two widely different dose rates were applied by means of a focused ion-beam system. Secondary ion mass spectrometry was used to measure the Ge depth distributions. It was found that different mechanisms were responsible for the dynamic annealing in Si and SiC.

UR - http://www.scopus.com/inward/record.url?scp=0037439772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037439772&partnerID=8YFLogxK

U2 - 10.1063/1.1533092

DO - 10.1063/1.1533092

M3 - Article

AN - SCOPUS:0037439772

VL - 93

SP - 1004

EP - 1013

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -