The effect of dose rate and temperature on the shape of Germanium (Ge) depth profiles in Si and SiC was discussed. Two widely different dose rates were applied by means of a focused ion-beam system. Secondary ion mass spectrometry was used to measure the Ge depth distributions. It was found that different mechanisms were responsible for the dynamic annealing in Si and SiC.
ASJC Scopus subject areas
- Physics and Astronomy(all)