Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC

M. Posselt, L. Bischoff, J. Teichert, A. Ster

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The effect of dose rate and temperature on the shape of Germanium (Ge) depth profiles in Si and SiC was discussed. Two widely different dose rates were applied by means of a focused ion-beam system. Secondary ion mass spectrometry was used to measure the Ge depth distributions. It was found that different mechanisms were responsible for the dynamic annealing in Si and SiC.

Original languageEnglish
Pages (from-to)1004-1013
Number of pages10
JournalJournal of Applied Physics
Volume93
Issue number2
DOIs
Publication statusPublished - Jan 15 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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