Influence of Cu as an impurity in Al/Ti and Al/W thin-film reactions

I. Krafcsik, J. Gyulai, C. J. Palmström, J. W. Mayer

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Abstract

Thin-film reactions of Al/Ti and Al/W with 3 at. % Cu in Al were investigated by glancing-angle x-ray diffraction and Rutherford backscattering for vacuum annealing in the temperature range 300-500°C. In the Al/Ti system, the intermetallic phase Al3Ti grows as (time) 1/2. The presence of Cu in Al retards the growth rate by an order of magnitude at 400°C and increases the activation energy from 1.8±0.1 to 2.4±0.1 eV. In the Al/W system, the presence of Cu retards the penetration of W into Al.

Original languageEnglish
Pages (from-to)1015-1017
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number11
DOIs
Publication statusPublished - 1983

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intermetallics
backscattering
x ray diffraction
penetration
activation energy
impurities
vacuum
annealing
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Influence of Cu as an impurity in Al/Ti and Al/W thin-film reactions. / Krafcsik, I.; Gyulai, J.; Palmström, C. J.; Mayer, J. W.

In: Applied Physics Letters, Vol. 43, No. 11, 1983, p. 1015-1017.

Research output: Contribution to journalArticle

Krafcsik, I. ; Gyulai, J. ; Palmström, C. J. ; Mayer, J. W. / Influence of Cu as an impurity in Al/Ti and Al/W thin-film reactions. In: Applied Physics Letters. 1983 ; Vol. 43, No. 11. pp. 1015-1017.
@article{625a73cd8afc4c579ae777b743892110,
title = "Influence of Cu as an impurity in Al/Ti and Al/W thin-film reactions",
abstract = "Thin-film reactions of Al/Ti and Al/W with 3 at. {\%} Cu in Al were investigated by glancing-angle x-ray diffraction and Rutherford backscattering for vacuum annealing in the temperature range 300-500°C. In the Al/Ti system, the intermetallic phase Al3Ti grows as (time) 1/2. The presence of Cu in Al retards the growth rate by an order of magnitude at 400°C and increases the activation energy from 1.8±0.1 to 2.4±0.1 eV. In the Al/W system, the presence of Cu retards the penetration of W into Al.",
author = "I. Krafcsik and J. Gyulai and Palmstr{\"o}m, {C. J.} and Mayer, {J. W.}",
year = "1983",
doi = "10.1063/1.94212",
language = "English",
volume = "43",
pages = "1015--1017",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Influence of Cu as an impurity in Al/Ti and Al/W thin-film reactions

AU - Krafcsik, I.

AU - Gyulai, J.

AU - Palmström, C. J.

AU - Mayer, J. W.

PY - 1983

Y1 - 1983

N2 - Thin-film reactions of Al/Ti and Al/W with 3 at. % Cu in Al were investigated by glancing-angle x-ray diffraction and Rutherford backscattering for vacuum annealing in the temperature range 300-500°C. In the Al/Ti system, the intermetallic phase Al3Ti grows as (time) 1/2. The presence of Cu in Al retards the growth rate by an order of magnitude at 400°C and increases the activation energy from 1.8±0.1 to 2.4±0.1 eV. In the Al/W system, the presence of Cu retards the penetration of W into Al.

AB - Thin-film reactions of Al/Ti and Al/W with 3 at. % Cu in Al were investigated by glancing-angle x-ray diffraction and Rutherford backscattering for vacuum annealing in the temperature range 300-500°C. In the Al/Ti system, the intermetallic phase Al3Ti grows as (time) 1/2. The presence of Cu in Al retards the growth rate by an order of magnitude at 400°C and increases the activation energy from 1.8±0.1 to 2.4±0.1 eV. In the Al/W system, the presence of Cu retards the penetration of W into Al.

UR - http://www.scopus.com/inward/record.url?scp=36749119975&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749119975&partnerID=8YFLogxK

U2 - 10.1063/1.94212

DO - 10.1063/1.94212

M3 - Article

AN - SCOPUS:36749119975

VL - 43

SP - 1015

EP - 1017

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -