Influence of an Oxidizing Annealing Ambient on the Distribution of As, Sb, and Ga Implanted into Silicon

H. Müller, J. Gyulai, W. K. Chu, J. W. Mayer, T. W. Sigmon

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Abstract

The redistribution of As, Sb, and Ga implants into silicon during wet oxidation was investigated by MeV He backscattering and channeling techniques. Oxidation produces an accumulation of nonsubstitutional As and Sb at the interface of the advancing oxide front. In contrast, the implanted Ga accumulates at the front surface of the oxide layer. In subsequent diffusion all three species are highly substitutional at concentrations at or below the solubility. Loss of As and Sb is minimal during oxidation or subsequent diffusion; however, for Ga diffusion encapsulation with Si3N4 was required.

Original languageEnglish
Pages (from-to)1234-1238
Number of pages5
JournalJournal of the Electrochemical Society
Volume122
Issue number9
DOIs
Publication statusPublished - Sep 1975

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Keywords

  • ion implantation
  • oxidizing anneal ambient
  • redistribution of dopants

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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