INFLUENCE OF AN OXIDIZING ANNEALING AMBIENT ON THE DISTRIBUTION OF As, Sb, AND Ga IMPLANTED INTO SILICON.

H. Mueller, J. Gyulai, W. K. Chu, J. W. Mayer, T. W. Sigmon

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The redistribution of As, Sb, and Ga implants into silicon during wet oxidation was investigated by MeV He backscattering and channeling techniques. Oxidation produces an accumulation of nonsubstitutional As and Sb at the interface of the advancing oxide front. In contrast, the implanted Ga accumulates at the front surface of the oxide layer. In subsequent diffusion all three species are highly substitutional at concentrations at or below the solubility. Loss of As and Sb is minimal during oxidation or subsequent diffusion; however, for Ga diffusion encapsulation with Si//3N//4 was required.

Original languageEnglish
Pages (from-to)1234-1238
Number of pages5
JournalJournal of the Electrochemical Society
Volume122
Issue number9
Publication statusPublished - Sep 1975

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Annealing
Oxidation
Oxides
oxidation
annealing
oxides
Silicon
Backscattering
Encapsulation
backscattering
solubility
Solubility
silicon

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

INFLUENCE OF AN OXIDIZING ANNEALING AMBIENT ON THE DISTRIBUTION OF As, Sb, AND Ga IMPLANTED INTO SILICON. / Mueller, H.; Gyulai, J.; Chu, W. K.; Mayer, J. W.; Sigmon, T. W.

In: Journal of the Electrochemical Society, Vol. 122, No. 9, 09.1975, p. 1234-1238.

Research output: Contribution to journalArticle

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