INELASTIC MEAN FREE PATH OF ELECTRONS IN SOME SEMICONDUCTOR COMPOUNDS AND METALS.

A. Jablonski, P. Mrozek, G. Gergely, M. Menhyard, A. Sulyok

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

The elastic backscattering probability P//e of electrons is proportional to the product of the inelastic mean free path (IMFP), effective backscattering cross section ( sigma //e//f//f), and atomic density (N). Thus, experimental evaluation of P//e, e. g. from the elastic peak intensity measurements, enables the determination of the IMFP. sigma //e//f//f can be calculated by integrating the differential elastic scattering cross sections using a simplified model based on the first Born approximation and the Thomas-Fermi-Dirac atomic potential. From the experimental values of P//e reported by Schmid et al. and by Gergely the IMP was determined for a number of elements. A good agreement was found with the data on the IMFP published in the literature.

Original languageEnglish
Pages (from-to)291-294
Number of pages4
JournalSurface and Interface Analysis
Volume6
Issue number6
Publication statusPublished - Dec 1984

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Backscattering
mean free path
Metals
Semiconductor materials
Born approximation
Inosine Monophosphate
Elastic scattering
Electrons
backscattering
IMP
metals
electrons
scattering cross sections
elastic scattering
evaluation
cross sections
products

ASJC Scopus subject areas

  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry

Cite this

INELASTIC MEAN FREE PATH OF ELECTRONS IN SOME SEMICONDUCTOR COMPOUNDS AND METALS. / Jablonski, A.; Mrozek, P.; Gergely, G.; Menhyard, M.; Sulyok, A.

In: Surface and Interface Analysis, Vol. 6, No. 6, 12.1984, p. 291-294.

Research output: Contribution to journalArticle

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