Inelastic mean free path data for Si corrected for surface excitation

Gábor Tamás Orosz, G. Gergely, Sándor Gurbán, M. Menyhárd, Aleksander Jablonski

Research output: Contribution to journalArticle

Abstract

Surface-sensitive electron spectroscopies, like Auger electron spectroscopy, X-ray photoelectron spectroscopy and elastic peak electron spectroscopy (EPES) are suitable techniques to investigate surfaces and thin layers. A theoretical model for electron transport is needed to process the observed electron spectra. Electron transport descriptions are based on the differential elastic cross sections for the sample atoms and the inelastic mean free path (IMFP) of backscattered electrons. An electron impinging on the sample can lose energy either due to surface or volume excitations. In the present work a Monte Carlo (MC) simulation of the elastic peak of Si, Ag, Ni, Cu, and Au for surface analysis is presented. The IMFP of Si was determined applying the EPES method. The integrated elastic peak ratio of Si with the standard metal reference samples corrected for surface excitation provided IMFP values of Si in the energy range E = 0.2-2.0 keV. Experiments were made with the ESA 31 HSA (ATOMKI) and with the DESA-100 (Staib) spectrometers. Surface correction was based on the application of Chen's model and material parameters. The Monte Carlo simulations of elastically backscattered electron trajectories were made using new EPESWIN software of Jablonski. An improvement of IMFP experimental results was achieved applying the presented procedure.

Original languageEnglish
Pages (from-to)581-585
Number of pages5
JournalMicroscopy and Microanalysis
Volume11
Issue number6
DOIs
Publication statusPublished - Dec 2005

Fingerprint

mean free path
Electron spectroscopy
electron spectroscopy
Electrons
excitation
electrons
Surface analysis
Auger electron spectroscopy
electron trajectories
Spectrometers
European Space Agency
X ray photoelectron spectroscopy
Auger spectroscopy
Trajectories
simulation
Atoms
photoelectron spectroscopy
spectrometers
computer programs
Metals

Keywords

  • EPES
  • Inelastic mean free path
  • Surface excitation

ASJC Scopus subject areas

  • Instrumentation

Cite this

Inelastic mean free path data for Si corrected for surface excitation. / Orosz, Gábor Tamás; Gergely, G.; Gurbán, Sándor; Menyhárd, M.; Jablonski, Aleksander.

In: Microscopy and Microanalysis, Vol. 11, No. 6, 12.2005, p. 581-585.

Research output: Contribution to journalArticle

Orosz, Gábor Tamás ; Gergely, G. ; Gurbán, Sándor ; Menyhárd, M. ; Jablonski, Aleksander. / Inelastic mean free path data for Si corrected for surface excitation. In: Microscopy and Microanalysis. 2005 ; Vol. 11, No. 6. pp. 581-585.
@article{e8695ec7c61544fcbcdce224385c2c91,
title = "Inelastic mean free path data for Si corrected for surface excitation",
abstract = "Surface-sensitive electron spectroscopies, like Auger electron spectroscopy, X-ray photoelectron spectroscopy and elastic peak electron spectroscopy (EPES) are suitable techniques to investigate surfaces and thin layers. A theoretical model for electron transport is needed to process the observed electron spectra. Electron transport descriptions are based on the differential elastic cross sections for the sample atoms and the inelastic mean free path (IMFP) of backscattered electrons. An electron impinging on the sample can lose energy either due to surface or volume excitations. In the present work a Monte Carlo (MC) simulation of the elastic peak of Si, Ag, Ni, Cu, and Au for surface analysis is presented. The IMFP of Si was determined applying the EPES method. The integrated elastic peak ratio of Si with the standard metal reference samples corrected for surface excitation provided IMFP values of Si in the energy range E = 0.2-2.0 keV. Experiments were made with the ESA 31 HSA (ATOMKI) and with the DESA-100 (Staib) spectrometers. Surface correction was based on the application of Chen's model and material parameters. The Monte Carlo simulations of elastically backscattered electron trajectories were made using new EPESWIN software of Jablonski. An improvement of IMFP experimental results was achieved applying the presented procedure.",
keywords = "EPES, Inelastic mean free path, Surface excitation",
author = "Orosz, {G{\'a}bor Tam{\'a}s} and G. Gergely and S{\'a}ndor Gurb{\'a}n and M. Menyh{\'a}rd and Aleksander Jablonski",
year = "2005",
month = "12",
doi = "10.1017/S1431927605050713",
language = "English",
volume = "11",
pages = "581--585",
journal = "Microscopy and Microanalysis",
issn = "1431-9276",
publisher = "Cambridge University Press",
number = "6",

}

TY - JOUR

T1 - Inelastic mean free path data for Si corrected for surface excitation

AU - Orosz, Gábor Tamás

AU - Gergely, G.

AU - Gurbán, Sándor

AU - Menyhárd, M.

AU - Jablonski, Aleksander

PY - 2005/12

Y1 - 2005/12

N2 - Surface-sensitive electron spectroscopies, like Auger electron spectroscopy, X-ray photoelectron spectroscopy and elastic peak electron spectroscopy (EPES) are suitable techniques to investigate surfaces and thin layers. A theoretical model for electron transport is needed to process the observed electron spectra. Electron transport descriptions are based on the differential elastic cross sections for the sample atoms and the inelastic mean free path (IMFP) of backscattered electrons. An electron impinging on the sample can lose energy either due to surface or volume excitations. In the present work a Monte Carlo (MC) simulation of the elastic peak of Si, Ag, Ni, Cu, and Au for surface analysis is presented. The IMFP of Si was determined applying the EPES method. The integrated elastic peak ratio of Si with the standard metal reference samples corrected for surface excitation provided IMFP values of Si in the energy range E = 0.2-2.0 keV. Experiments were made with the ESA 31 HSA (ATOMKI) and with the DESA-100 (Staib) spectrometers. Surface correction was based on the application of Chen's model and material parameters. The Monte Carlo simulations of elastically backscattered electron trajectories were made using new EPESWIN software of Jablonski. An improvement of IMFP experimental results was achieved applying the presented procedure.

AB - Surface-sensitive electron spectroscopies, like Auger electron spectroscopy, X-ray photoelectron spectroscopy and elastic peak electron spectroscopy (EPES) are suitable techniques to investigate surfaces and thin layers. A theoretical model for electron transport is needed to process the observed electron spectra. Electron transport descriptions are based on the differential elastic cross sections for the sample atoms and the inelastic mean free path (IMFP) of backscattered electrons. An electron impinging on the sample can lose energy either due to surface or volume excitations. In the present work a Monte Carlo (MC) simulation of the elastic peak of Si, Ag, Ni, Cu, and Au for surface analysis is presented. The IMFP of Si was determined applying the EPES method. The integrated elastic peak ratio of Si with the standard metal reference samples corrected for surface excitation provided IMFP values of Si in the energy range E = 0.2-2.0 keV. Experiments were made with the ESA 31 HSA (ATOMKI) and with the DESA-100 (Staib) spectrometers. Surface correction was based on the application of Chen's model and material parameters. The Monte Carlo simulations of elastically backscattered electron trajectories were made using new EPESWIN software of Jablonski. An improvement of IMFP experimental results was achieved applying the presented procedure.

KW - EPES

KW - Inelastic mean free path

KW - Surface excitation

UR - http://www.scopus.com/inward/record.url?scp=28744435235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28744435235&partnerID=8YFLogxK

U2 - 10.1017/S1431927605050713

DO - 10.1017/S1431927605050713

M3 - Article

VL - 11

SP - 581

EP - 585

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

SN - 1431-9276

IS - 6

ER -