Indium tin oxide films made from nanoparticles: Models for the optical and electrical properties

J. Ederth, P. Heszler, A. Hultåker, G. A. Niklasson, C. G. Granqvist

Research output: Contribution to journalConference article

115 Citations (Scopus)


Porous thin films comprising nanoparticles of In2O 3:Sn (known as indium tin oxide, ITO) were made by spin coating followed by annealing. The nanoparticles were prepared by a wet chemical technique. The films had a luminous transmittance of ∼90% and an electrical resistivity of ∼10-2 Ω cm. Spectral transmittance and reflectance were analyzed by first representing the ITO nanoparticles within the Drude theory, with a frequency-dependent scattering time characteristic for ionized impurity scattering, and then applying effective medium theory to account for the porosity. It was found that the individual nanoparticles had a resistivity of ∼2×10-4 Ω cm, i.e. their electrical properties were comparable to those in the best films made by physical or chemical vapour deposition. Temperature-dependent electrical resistivity data for the films could be reconciled with a model for fluctuation induced tunneling between micrometer-size clusters of internally connected ITO nanoparticles.

Original languageEnglish
Pages (from-to)199-206
Number of pages8
JournalThin Solid Films
Issue number2
Publication statusPublished - Dec 15 2003
EventProceedings of the 3rd International Symposium on Transparent Oxide - Tokyo, Japan
Duration: Apr 10 2003Apr 11 2003


  • Indium tin oxide
  • Nanostructures
  • Optical properties
  • Resistivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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