Indication of an anomalous amorphous state of Ge induced by heavy-ion implantation

G. Petö, L. Rosta, J. Kanski, A. Barna, A. Menelle, R. Belissent

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Structural and electronic properties of Sb implantation induced amorphous Ge were investigated. It was found that the basic properties of this amorphous material differ drastically from those of amorphous Ge obtained by evaporation. The structure of implanted amorphous Ge is intermediate between evaporated and liquid Ge.

Original languageEnglish
Pages (from-to)258-263
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume125
Issue number3
DOIs
Publication statusPublished - Nov 2 1990

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this