InAlN/GaN heterostructures for microwave power and beyond

E. Kohn, M. Alomari, A. Denisenko, M. Dipalo, D. Maier, F. Medjdoub, C. Pietzka, S. Delage, M. A. DiForte-Poisson, E. Morvan, N. Sarazin, J. C. Jacquet, C. Dua, J. F. Carlin, N. Grandjean, M. A. Py, M. Gonschorek, J. Kuzmik, D. Pogany, G. Pozzovivo & 13 others C. Ostermaier, L. Tóth, B. Pécz, J. C. De Jaeger, C. Gaquière, K. Cico, K. Fröhlich, A. I. Georgakilas, E. Iliopoulos, G. Konstantinidis, C. Giessen, M. Heuken, B. Schineller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing. It enables operation at extremely high temperature once problems with contact metallization and passivation have been solved. It is the only heterostructure known presently, which allows overgrowth of high quality diamond films to combine two of the most stable semiconductors. Thus, applications reach from high power microwaves systems and high temperature electronics to sensing in harsh environment.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: Dec 7 2009Dec 9 2009

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period12/7/0912/9/09

Fingerprint

Heterojunctions
Electronic equipment
Microwaves
microwaves
Diamond films
Metallizing
diamond films
electronics
Passivation
passivity
electric contacts
Semiconductor materials
Temperature
temperature
aluminum gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kohn, E., Alomari, M., Denisenko, A., Dipalo, M., Maier, D., Medjdoub, F., ... Schineller, B. (2009). InAlN/GaN heterostructures for microwave power and beyond. In Technical Digest - International Electron Devices Meeting, IEDM [5424395] https://doi.org/10.1109/IEDM.2009.5424395

InAlN/GaN heterostructures for microwave power and beyond. / Kohn, E.; Alomari, M.; Denisenko, A.; Dipalo, M.; Maier, D.; Medjdoub, F.; Pietzka, C.; Delage, S.; DiForte-Poisson, M. A.; Morvan, E.; Sarazin, N.; Jacquet, J. C.; Dua, C.; Carlin, J. F.; Grandjean, N.; Py, M. A.; Gonschorek, M.; Kuzmik, J.; Pogany, D.; Pozzovivo, G.; Ostermaier, C.; Tóth, L.; Pécz, B.; De Jaeger, J. C.; Gaquière, C.; Cico, K.; Fröhlich, K.; Georgakilas, A. I.; Iliopoulos, E.; Konstantinidis, G.; Giessen, C.; Heuken, M.; Schineller, B.

Technical Digest - International Electron Devices Meeting, IEDM. 2009. 5424395.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kohn, E, Alomari, M, Denisenko, A, Dipalo, M, Maier, D, Medjdoub, F, Pietzka, C, Delage, S, DiForte-Poisson, MA, Morvan, E, Sarazin, N, Jacquet, JC, Dua, C, Carlin, JF, Grandjean, N, Py, MA, Gonschorek, M, Kuzmik, J, Pogany, D, Pozzovivo, G, Ostermaier, C, Tóth, L, Pécz, B, De Jaeger, JC, Gaquière, C, Cico, K, Fröhlich, K, Georgakilas, AI, Iliopoulos, E, Konstantinidis, G, Giessen, C, Heuken, M & Schineller, B 2009, InAlN/GaN heterostructures for microwave power and beyond. in Technical Digest - International Electron Devices Meeting, IEDM., 5424395, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 12/7/09. https://doi.org/10.1109/IEDM.2009.5424395
Kohn E, Alomari M, Denisenko A, Dipalo M, Maier D, Medjdoub F et al. InAlN/GaN heterostructures for microwave power and beyond. In Technical Digest - International Electron Devices Meeting, IEDM. 2009. 5424395 https://doi.org/10.1109/IEDM.2009.5424395
Kohn, E. ; Alomari, M. ; Denisenko, A. ; Dipalo, M. ; Maier, D. ; Medjdoub, F. ; Pietzka, C. ; Delage, S. ; DiForte-Poisson, M. A. ; Morvan, E. ; Sarazin, N. ; Jacquet, J. C. ; Dua, C. ; Carlin, J. F. ; Grandjean, N. ; Py, M. A. ; Gonschorek, M. ; Kuzmik, J. ; Pogany, D. ; Pozzovivo, G. ; Ostermaier, C. ; Tóth, L. ; Pécz, B. ; De Jaeger, J. C. ; Gaquière, C. ; Cico, K. ; Fröhlich, K. ; Georgakilas, A. I. ; Iliopoulos, E. ; Konstantinidis, G. ; Giessen, C. ; Heuken, M. ; Schineller, B. / InAlN/GaN heterostructures for microwave power and beyond. Technical Digest - International Electron Devices Meeting, IEDM. 2009.
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AU - Denisenko, A.

AU - Dipalo, M.

AU - Maier, D.

AU - Medjdoub, F.

AU - Pietzka, C.

AU - Delage, S.

AU - DiForte-Poisson, M. A.

AU - Morvan, E.

AU - Sarazin, N.

AU - Jacquet, J. C.

AU - Dua, C.

AU - Carlin, J. F.

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AU - Py, M. A.

AU - Gonschorek, M.

AU - Kuzmik, J.

AU - Pogany, D.

AU - Pozzovivo, G.

AU - Ostermaier, C.

AU - Tóth, L.

AU - Pécz, B.

AU - De Jaeger, J. C.

AU - Gaquière, C.

AU - Cico, K.

AU - Fröhlich, K.

AU - Georgakilas, A. I.

AU - Iliopoulos, E.

AU - Konstantinidis, G.

AU - Giessen, C.

AU - Heuken, M.

AU - Schineller, B.

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