InAlGaAs-InGaAs-InP RCE pin photodiode for 1300 nm wavelength region

J. Kovac, F. Uherek, A. Satka, J. Waclawek, J. Jakabovic, R. Srnanek, B. Rheinlander, V. Gottschalch, S. Hasenohrl, J. Novak, P. Barna, A. Barna, J. Wood

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

The design, growth and operation of resonant cavity enhanced (RCE) photodiodes are discussed. The spectral responses of resonantly enhanced photodiodes with the same 20 pairs of In0.53Ga0.47As/InP Bragg mirror and different In0.53Ga0.47As active layer thicknesses have been analyzed. The enhancement of 3 times at resonant peak 1318 nm for RCE photodiode with 200 nm active layer thickness has been achieved as compared to conventional photodiodes. This structure could be very promising for high quantum efficiency photoreceivers in 1300 nm wavelength region.

Original languageEnglish
Pages (from-to)219-222
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Jan 1 1996
EventProceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger
Duration: Apr 21 1996Apr 25 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Kovac, J., Uherek, F., Satka, A., Waclawek, J., Jakabovic, J., Srnanek, R., Rheinlander, B., Gottschalch, V., Hasenohrl, S., Novak, J., Barna, P., Barna, A., & Wood, J. (1996). InAlGaAs-InGaAs-InP RCE pin photodiode for 1300 nm wavelength region. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 219-222.