In-situ stress measurement during the deposition of CNx thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation

I. F. Brunell, L. Pichon, N. Hellgren, Zs Czigány, J. Neidhardt, L. Hultman

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Stress development during growth of CNx films by unbalanced magnetron sputtering has been investigated with an in-situ laser deflection technique. The stress is initially tensile, then it becomes compressive, reaching a maximum of as much as 7GPa. These are anomalously high stress levels compared with pure carbon, considering the low ion energies (28 eV) and ion-to-neutral arrival rate ratio (<1) employed. This phenomenon is explained by the formation of a fullerene-like microstructure and nitrogen substitution at the growth surface. An accompanying increased reactivity of carbon atoms promotes sp3 bonding or other cross-linking of curved basal planes with resulting film densification.

Original languageEnglish
Pages (from-to)395-403
Number of pages9
JournalPhilosophical Magazine Letters
Volume84
Issue number6
DOIs
Publication statusPublished - Jun 1 2004

ASJC Scopus subject areas

  • Condensed Matter Physics

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