In-situ stress measurement during the deposition of CNx thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation

I. F. Brunell, L. Pichon, N. Hellgren, Z. Czigány, J. Neidhardt, L. Hultman

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Stress development during growth of CNx films by unbalanced magnetron sputtering has been investigated with an in-situ laser deflection technique. The stress is initially tensile, then it becomes compressive, reaching a maximum of as much as 7GPa. These are anomalously high stress levels compared with pure carbon, considering the low ion energies (28 eV) and ion-to-neutral arrival rate ratio (3 bonding or other cross-linking of curved basal planes with resulting film densification.

Original languageEnglish
Pages (from-to)395-403
Number of pages9
JournalPhilosophical Magazine Letters
Volume84
Issue number6
DOIs
Publication statusPublished - Jun 2004

Fingerprint

stress measurement
Stress measurement
Ion bombardment
ion irradiation
Magnetron sputtering
magnetron sputtering
Thin films
thin films
Ions
densification
Densification
arrivals
deflection
ions
Carbon
Lasers
carbon
lasers
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

In-situ stress measurement during the deposition of CNx thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation. / Brunell, I. F.; Pichon, L.; Hellgren, N.; Czigány, Z.; Neidhardt, J.; Hultman, L.

In: Philosophical Magazine Letters, Vol. 84, No. 6, 06.2004, p. 395-403.

Research output: Contribution to journalArticle

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