In situ spectroscopic ellipsometry in vertical furnace: Monitoring and control of high-temperature processes

P. Petrik, C. Schneider

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, integration of spectroscopic ellipsometry in a vertical furnace for measurement and control during chemical vapour deposition and thermal oxidation is presented. The major goal of this activity was to adapt the ellipsometer arrangement to the furnace geometry with a minimum impact on the furnace process performance. Modifications in the furnace geometry were restricted as far as possible, to show that a fast integration in existing industrial equipment with minor costs is possible. This aim led to a novel beam-guiding system. The light beam is reflected by four prisms on its way to the sample inside the furnace and back to the ellipsometer. Therefore, a method was evaluated to correct the phase shift caused by the prisms. This setup has been used for the in situ characterization of multi-layer processing in the vertical furnace. The measurements during processes require the high-temperature dielectric function of the used materials, so a systematic study was started to determine the dielectric functions of relevant semiconductor materials at process temperatures. These data were used to build appropriate optical models for in situ monitoring of the layer structure such as the thickness or the crystallinity. Two different optical models were compared using the combination of the high-temperature dielectric function of amorphous silicon and single-crystalline silicon, or that of amorphous silicon and polycrystalline silicon. The system has been used for high-temperature processes, such as monitoring and control of thermal oxidation terminated by end-point detection or the monitoring of the crystallization of amorphous silicon.

Original languageEnglish
Pages (from-to)427-434
Number of pages8
JournalVacuum
Volume61
Issue number2-4
DOIs
Publication statusPublished - May 14 2001

Fingerprint

Spectroscopic ellipsometry
ellipsometry
furnaces
Furnaces
Monitoring
Amorphous silicon
amorphous silicon
ellipsometers
Prisms
Temperature
prisms
Oxidation
oxidation
Geometry
silicon
Silicon
geometry
Crystallization
Polysilicon
Phase shift

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

In situ spectroscopic ellipsometry in vertical furnace : Monitoring and control of high-temperature processes. / Petrik, P.; Schneider, C.

In: Vacuum, Vol. 61, No. 2-4, 14.05.2001, p. 427-434.

Research output: Contribution to journalArticle

@article{38a0db768d77441f84a7273c86973e45,
title = "In situ spectroscopic ellipsometry in vertical furnace: Monitoring and control of high-temperature processes",
abstract = "In this paper, integration of spectroscopic ellipsometry in a vertical furnace for measurement and control during chemical vapour deposition and thermal oxidation is presented. The major goal of this activity was to adapt the ellipsometer arrangement to the furnace geometry with a minimum impact on the furnace process performance. Modifications in the furnace geometry were restricted as far as possible, to show that a fast integration in existing industrial equipment with minor costs is possible. This aim led to a novel beam-guiding system. The light beam is reflected by four prisms on its way to the sample inside the furnace and back to the ellipsometer. Therefore, a method was evaluated to correct the phase shift caused by the prisms. This setup has been used for the in situ characterization of multi-layer processing in the vertical furnace. The measurements during processes require the high-temperature dielectric function of the used materials, so a systematic study was started to determine the dielectric functions of relevant semiconductor materials at process temperatures. These data were used to build appropriate optical models for in situ monitoring of the layer structure such as the thickness or the crystallinity. Two different optical models were compared using the combination of the high-temperature dielectric function of amorphous silicon and single-crystalline silicon, or that of amorphous silicon and polycrystalline silicon. The system has been used for high-temperature processes, such as monitoring and control of thermal oxidation terminated by end-point detection or the monitoring of the crystallization of amorphous silicon.",
author = "P. Petrik and C. Schneider",
year = "2001",
month = "5",
day = "14",
doi = "10.1016/S0042-207X(01)00139-7",
language = "English",
volume = "61",
pages = "427--434",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "2-4",

}

TY - JOUR

T1 - In situ spectroscopic ellipsometry in vertical furnace

T2 - Monitoring and control of high-temperature processes

AU - Petrik, P.

AU - Schneider, C.

PY - 2001/5/14

Y1 - 2001/5/14

N2 - In this paper, integration of spectroscopic ellipsometry in a vertical furnace for measurement and control during chemical vapour deposition and thermal oxidation is presented. The major goal of this activity was to adapt the ellipsometer arrangement to the furnace geometry with a minimum impact on the furnace process performance. Modifications in the furnace geometry were restricted as far as possible, to show that a fast integration in existing industrial equipment with minor costs is possible. This aim led to a novel beam-guiding system. The light beam is reflected by four prisms on its way to the sample inside the furnace and back to the ellipsometer. Therefore, a method was evaluated to correct the phase shift caused by the prisms. This setup has been used for the in situ characterization of multi-layer processing in the vertical furnace. The measurements during processes require the high-temperature dielectric function of the used materials, so a systematic study was started to determine the dielectric functions of relevant semiconductor materials at process temperatures. These data were used to build appropriate optical models for in situ monitoring of the layer structure such as the thickness or the crystallinity. Two different optical models were compared using the combination of the high-temperature dielectric function of amorphous silicon and single-crystalline silicon, or that of amorphous silicon and polycrystalline silicon. The system has been used for high-temperature processes, such as monitoring and control of thermal oxidation terminated by end-point detection or the monitoring of the crystallization of amorphous silicon.

AB - In this paper, integration of spectroscopic ellipsometry in a vertical furnace for measurement and control during chemical vapour deposition and thermal oxidation is presented. The major goal of this activity was to adapt the ellipsometer arrangement to the furnace geometry with a minimum impact on the furnace process performance. Modifications in the furnace geometry were restricted as far as possible, to show that a fast integration in existing industrial equipment with minor costs is possible. This aim led to a novel beam-guiding system. The light beam is reflected by four prisms on its way to the sample inside the furnace and back to the ellipsometer. Therefore, a method was evaluated to correct the phase shift caused by the prisms. This setup has been used for the in situ characterization of multi-layer processing in the vertical furnace. The measurements during processes require the high-temperature dielectric function of the used materials, so a systematic study was started to determine the dielectric functions of relevant semiconductor materials at process temperatures. These data were used to build appropriate optical models for in situ monitoring of the layer structure such as the thickness or the crystallinity. Two different optical models were compared using the combination of the high-temperature dielectric function of amorphous silicon and single-crystalline silicon, or that of amorphous silicon and polycrystalline silicon. The system has been used for high-temperature processes, such as monitoring and control of thermal oxidation terminated by end-point detection or the monitoring of the crystallization of amorphous silicon.

UR - http://www.scopus.com/inward/record.url?scp=0035858502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035858502&partnerID=8YFLogxK

U2 - 10.1016/S0042-207X(01)00139-7

DO - 10.1016/S0042-207X(01)00139-7

M3 - Article

AN - SCOPUS:0035858502

VL - 61

SP - 427

EP - 434

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 2-4

ER -