In situ spectroscopic ellipsometry for the characterization of polysilicon formation inside a vertical furnace

P. Petrik, W. Lehnert, C. Schneider, M. Fried, T. Lohner, J. Gyulai, H. Ryssel

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

A spectroscopic ellipsometer was integrated in a vertical furnace for measurement and control during chemical vapor deposition and - thermal oxidation processes. The major goal of this activity was to adapt the ellipsometer arrangement to the furnace geometry with a minimum impact on the furnace process performance. Modifications in the furnace geometry were restricted as far as possible, to show that a fast integration in existing industrial equipment with minor costs can be done. This aim led to a novel beam-guiding system. This setup has been used for the in situ characterization of polysilicon formation, inside the vertical furnace during high temperature processes. The polysilicon-on-oxide structures were modeled using the Bruggeman effective-medium approximation (B-EMA). The crystallization process of amorphous silicon layers during annealing at 600 °C has been monitored. Layer thickness and the degree of crystallinity can be obtained simultaneously. The crystallinity can be described in the optical model using a `mixture' of amorphous silicon and single-crystalline silicon in the B-EMA.

Original languageEnglish
Pages (from-to)150-155
Number of pages6
JournalThin Solid Films
Volume364
Issue number1
DOIs
Publication statusPublished - Mar 27 2000
EventThe 1999 E-MRS Spring Conference, Symposium P: Optical Characterization of Semiconductor Layers and Surfaces - Strasbourg, France
Duration: Jun 1 1999Jun 4 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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