IN SITU MEASUREMENTS OF ARSENIC-LOSSES DURING ANNEALING OF THE USUAL EVAPORATED CONTACTS OF GaAs GUNN DIODES.

T. Sebestyen, M. Menyhárd, D. Szigethy

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Measurements of the arsenic losses during alloying of the usual evaporated metal contact systems of GaAs Gunn diodes are given. The results were obtained by making in situ alloying processes in a mass spectrometer. Curves of As//2 yields are given as functions of temperature and time.

Original languageEnglish
Pages (from-to)96-97
Number of pages2
JournalElectronics Letters
Volume12
Issue number4
Publication statusPublished - Jan 1 1976

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Arsenic
Alloying
Annealing
Gunn diodes
Mass spectrometers
Metals
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

IN SITU MEASUREMENTS OF ARSENIC-LOSSES DURING ANNEALING OF THE USUAL EVAPORATED CONTACTS OF GaAs GUNN DIODES. / Sebestyen, T.; Menyhárd, M.; Szigethy, D.

In: Electronics Letters, Vol. 12, No. 4, 01.01.1976, p. 96-97.

Research output: Contribution to journalArticle

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