In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions

L. Bíró, J. Gyulai, K. Havancsák, A. Yu Didyk, L. Frey, H. Ryssel

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Irradiation in a direction parallel to the surface of Si, Highly Oriented Pyrolithic Graphite (HOPG) and mica (MI) samples is applied for in-depth characterization of the damage distribution produced by 209 MeV Kr ions. In Si four distinct damage zones are delineated. The features giving the dominant contribution to the roughness value are identified. Comparison of spreading resistance measurements on the original surface and on a surface revealed by grinding away 5 μm from the sample surface permitted the identification of regions where the proximity of the surface plays a major role. For HOPG and MI, doses below 1012 cm12 should be used to avoid cleavage, since this leads to mechanical instability.

Original languageEnglish
Pages (from-to)32-37
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume127-128
Publication statusPublished - May 1997

Fingerprint

Ions
damage
Scanning
scanning
Graphite
Mica
ions
mica
graphite
grinding
proximity
cleavage
roughness
Surface roughness
Irradiation
dosage
irradiation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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abstract = "Irradiation in a direction parallel to the surface of Si, Highly Oriented Pyrolithic Graphite (HOPG) and mica (MI) samples is applied for in-depth characterization of the damage distribution produced by 209 MeV Kr ions. In Si four distinct damage zones are delineated. The features giving the dominant contribution to the roughness value are identified. Comparison of spreading resistance measurements on the original surface and on a surface revealed by grinding away 5 μm from the sample surface permitted the identification of regions where the proximity of the surface plays a major role. For HOPG and MI, doses below 1012 cm12 should be used to avoid cleavage, since this leads to mechanical instability.",
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T1 - In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions

AU - Bíró, L.

AU - Gyulai, J.

AU - Havancsák, K.

AU - Didyk, A. Yu

AU - Frey, L.

AU - Ryssel, H.

PY - 1997/5

Y1 - 1997/5

N2 - Irradiation in a direction parallel to the surface of Si, Highly Oriented Pyrolithic Graphite (HOPG) and mica (MI) samples is applied for in-depth characterization of the damage distribution produced by 209 MeV Kr ions. In Si four distinct damage zones are delineated. The features giving the dominant contribution to the roughness value are identified. Comparison of spreading resistance measurements on the original surface and on a surface revealed by grinding away 5 μm from the sample surface permitted the identification of regions where the proximity of the surface plays a major role. For HOPG and MI, doses below 1012 cm12 should be used to avoid cleavage, since this leads to mechanical instability.

AB - Irradiation in a direction parallel to the surface of Si, Highly Oriented Pyrolithic Graphite (HOPG) and mica (MI) samples is applied for in-depth characterization of the damage distribution produced by 209 MeV Kr ions. In Si four distinct damage zones are delineated. The features giving the dominant contribution to the roughness value are identified. Comparison of spreading resistance measurements on the original surface and on a surface revealed by grinding away 5 μm from the sample surface permitted the identification of regions where the proximity of the surface plays a major role. For HOPG and MI, doses below 1012 cm12 should be used to avoid cleavage, since this leads to mechanical instability.

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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