In-depth characterization of damage produced by swift heavy ion irradiation using a tapping mode atomic force microscope

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2 Citations (Scopus)

Abstract

The damage produced by 209 MeV Kr ions in three different materials, muscovite mica (MM), an insulator; Si, a semiconductor; and Highly Oriented Pyrolithic Graphite (HOPG), a semimetal is investigated in the entire depth of penetration. The comparison of damage in the three materials shows similarities between MM and HOPG, while the damage found on Si is completely different from that found in the previous two. In all three materials damage produced around the trajectory of individual particles was identified. Production mechanisms are proposed for the observed features. The contrast mechanism of Tapping Mode AFM is discussed for some of the observed features.

Original languageEnglish
Pages (from-to)129-134
Number of pages6
JournalMaterials Science Forum
Volume248-249
Publication statusPublished - 1997

Fingerprint

Heavy Ions
Ion bombardment
ion irradiation
Heavy ions
heavy ions
Microscopes
Graphite
microscopes
Mica
damage
muscovite
mica
Metalloids
graphite
metalloids
Trajectories
Ions
Semiconductor materials
penetration
insulators

Keywords

  • AFM
  • Cleavage
  • HOPG
  • In-Depth Damage Characterization
  • Mica
  • Parallel Irradiation
  • Si
  • Swift Heavy Ions
  • Tapping Mode

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

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title = "In-depth characterization of damage produced by swift heavy ion irradiation using a tapping mode atomic force microscope",
abstract = "The damage produced by 209 MeV Kr ions in three different materials, muscovite mica (MM), an insulator; Si, a semiconductor; and Highly Oriented Pyrolithic Graphite (HOPG), a semimetal is investigated in the entire depth of penetration. The comparison of damage in the three materials shows similarities between MM and HOPG, while the damage found on Si is completely different from that found in the previous two. In all three materials damage produced around the trajectory of individual particles was identified. Production mechanisms are proposed for the observed features. The contrast mechanism of Tapping Mode AFM is discussed for some of the observed features.",
keywords = "AFM, Cleavage, HOPG, In-Depth Damage Characterization, Mica, Parallel Irradiation, Si, Swift Heavy Ions, Tapping Mode",
author = "L. B{\'i}r{\'o} and J. Gyulai and K. Havancs{\'a}k",
year = "1997",
language = "English",
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pages = "129--134",
journal = "Materials Science Forum",
issn = "0255-5476",
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T1 - In-depth characterization of damage produced by swift heavy ion irradiation using a tapping mode atomic force microscope

AU - Bíró, L.

AU - Gyulai, J.

AU - Havancsák, K.

PY - 1997

Y1 - 1997

N2 - The damage produced by 209 MeV Kr ions in three different materials, muscovite mica (MM), an insulator; Si, a semiconductor; and Highly Oriented Pyrolithic Graphite (HOPG), a semimetal is investigated in the entire depth of penetration. The comparison of damage in the three materials shows similarities between MM and HOPG, while the damage found on Si is completely different from that found in the previous two. In all three materials damage produced around the trajectory of individual particles was identified. Production mechanisms are proposed for the observed features. The contrast mechanism of Tapping Mode AFM is discussed for some of the observed features.

AB - The damage produced by 209 MeV Kr ions in three different materials, muscovite mica (MM), an insulator; Si, a semiconductor; and Highly Oriented Pyrolithic Graphite (HOPG), a semimetal is investigated in the entire depth of penetration. The comparison of damage in the three materials shows similarities between MM and HOPG, while the damage found on Si is completely different from that found in the previous two. In all three materials damage produced around the trajectory of individual particles was identified. Production mechanisms are proposed for the observed features. The contrast mechanism of Tapping Mode AFM is discussed for some of the observed features.

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KW - Cleavage

KW - HOPG

KW - In-Depth Damage Characterization

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KW - Swift Heavy Ions

KW - Tapping Mode

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