Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering

C. Ostermaier, G. Pozzovivo, J. F. Carlin, B. Basnar, W. Schrenk, A. M. Andrews, Y. Douvry, C. Gaquiere, J. C. De Jaeger, L. Tóth, B. Pécz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated a 2 nm thin InAlN/AlN barrier after recessing of a GaN cap on top of it and Ir gate metallization. Detailed analysis of the recess process revealed practically no damage until the formation of an etch-resistant barrier layer producing nitrogen vacancies and hence defect assisted tunneling through the thin barrier. Annealing of the Ir-based gate stack showed a reduction of the electrical distance between the gate and the channel. The effect was linked to an oxygen-containing interface layer between the Ir metal and the InAlN layer where oxygen diffused into Ir at elevated temperatures. Resulting devices showed state-of-the-art normally-off performance.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages905-906
Number of pages2
Volume1399
DOIs
Publication statusPublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: Jul 25 2010Jul 30 2010

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period7/25/107/30/10

Fingerprint

engineering
recesses
oxygen
barrier layers
caps
damage
nitrogen
annealing
defects
metals
temperature

Keywords

  • enhancement mode device
  • High electron mobility transistor
  • InAlN barrier

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ostermaier, C., Pozzovivo, G., Carlin, J. F., Basnar, B., Schrenk, W., Andrews, A. M., ... Kuzmik, J. (2011). Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering. In AIP Conference Proceedings (Vol. 1399, pp. 905-906) https://doi.org/10.1063/1.3666669

Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering. / Ostermaier, C.; Pozzovivo, G.; Carlin, J. F.; Basnar, B.; Schrenk, W.; Andrews, A. M.; Douvry, Y.; Gaquiere, C.; De Jaeger, J. C.; Tóth, L.; Pécz, B.; Gonschorek, M.; Feltin, E.; Grandjean, N.; Strasser, G.; Pogany, D.; Kuzmik, J.

AIP Conference Proceedings. Vol. 1399 2011. p. 905-906.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ostermaier, C, Pozzovivo, G, Carlin, JF, Basnar, B, Schrenk, W, Andrews, AM, Douvry, Y, Gaquiere, C, De Jaeger, JC, Tóth, L, Pécz, B, Gonschorek, M, Feltin, E, Grandjean, N, Strasser, G, Pogany, D & Kuzmik, J 2011, Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering. in AIP Conference Proceedings. vol. 1399, pp. 905-906, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 7/25/10. https://doi.org/10.1063/1.3666669
Ostermaier C, Pozzovivo G, Carlin JF, Basnar B, Schrenk W, Andrews AM et al. Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering. In AIP Conference Proceedings. Vol. 1399. 2011. p. 905-906 https://doi.org/10.1063/1.3666669
Ostermaier, C. ; Pozzovivo, G. ; Carlin, J. F. ; Basnar, B. ; Schrenk, W. ; Andrews, A. M. ; Douvry, Y. ; Gaquiere, C. ; De Jaeger, J. C. ; Tóth, L. ; Pécz, B. ; Gonschorek, M. ; Feltin, E. ; Grandjean, N. ; Strasser, G. ; Pogany, D. ; Kuzmik, J. / Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering. AIP Conference Proceedings. Vol. 1399 2011. pp. 905-906
@inproceedings{d0851603684743158385e4d1ef58ea73,
title = "Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering",
abstract = "We investigated a 2 nm thin InAlN/AlN barrier after recessing of a GaN cap on top of it and Ir gate metallization. Detailed analysis of the recess process revealed practically no damage until the formation of an etch-resistant barrier layer producing nitrogen vacancies and hence defect assisted tunneling through the thin barrier. Annealing of the Ir-based gate stack showed a reduction of the electrical distance between the gate and the channel. The effect was linked to an oxygen-containing interface layer between the Ir metal and the InAlN layer where oxygen diffused into Ir at elevated temperatures. Resulting devices showed state-of-the-art normally-off performance.",
keywords = "enhancement mode device, High electron mobility transistor, InAlN barrier",
author = "C. Ostermaier and G. Pozzovivo and Carlin, {J. F.} and B. Basnar and W. Schrenk and Andrews, {A. M.} and Y. Douvry and C. Gaquiere and {De Jaeger}, {J. C.} and L. T{\'o}th and B. P{\'e}cz and M. Gonschorek and E. Feltin and N. Grandjean and G. Strasser and D. Pogany and J. Kuzmik",
year = "2011",
doi = "10.1063/1.3666669",
language = "English",
isbn = "9780735410022",
volume = "1399",
pages = "905--906",
booktitle = "AIP Conference Proceedings",

}

TY - GEN

T1 - Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering

AU - Ostermaier, C.

AU - Pozzovivo, G.

AU - Carlin, J. F.

AU - Basnar, B.

AU - Schrenk, W.

AU - Andrews, A. M.

AU - Douvry, Y.

AU - Gaquiere, C.

AU - De Jaeger, J. C.

AU - Tóth, L.

AU - Pécz, B.

AU - Gonschorek, M.

AU - Feltin, E.

AU - Grandjean, N.

AU - Strasser, G.

AU - Pogany, D.

AU - Kuzmik, J.

PY - 2011

Y1 - 2011

N2 - We investigated a 2 nm thin InAlN/AlN barrier after recessing of a GaN cap on top of it and Ir gate metallization. Detailed analysis of the recess process revealed practically no damage until the formation of an etch-resistant barrier layer producing nitrogen vacancies and hence defect assisted tunneling through the thin barrier. Annealing of the Ir-based gate stack showed a reduction of the electrical distance between the gate and the channel. The effect was linked to an oxygen-containing interface layer between the Ir metal and the InAlN layer where oxygen diffused into Ir at elevated temperatures. Resulting devices showed state-of-the-art normally-off performance.

AB - We investigated a 2 nm thin InAlN/AlN barrier after recessing of a GaN cap on top of it and Ir gate metallization. Detailed analysis of the recess process revealed practically no damage until the formation of an etch-resistant barrier layer producing nitrogen vacancies and hence defect assisted tunneling through the thin barrier. Annealing of the Ir-based gate stack showed a reduction of the electrical distance between the gate and the channel. The effect was linked to an oxygen-containing interface layer between the Ir metal and the InAlN layer where oxygen diffused into Ir at elevated temperatures. Resulting devices showed state-of-the-art normally-off performance.

KW - enhancement mode device

KW - High electron mobility transistor

KW - InAlN barrier

UR - http://www.scopus.com/inward/record.url?scp=84855480103&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855480103&partnerID=8YFLogxK

U2 - 10.1063/1.3666669

DO - 10.1063/1.3666669

M3 - Conference contribution

AN - SCOPUS:84855480103

SN - 9780735410022

VL - 1399

SP - 905

EP - 906

BT - AIP Conference Proceedings

ER -