Improvements in Pt-based Schottky contacts to 3C-SiC

G. Constantinidis, B. Pécz, K. Tsagaraki, M. Kayambaki, K. Michelakis

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Despite its structural shortcomings (stacking faults, twins and threading dislocations), 3C-SiC heteroepitaxially grown on Si still has potential for high temperature sensor applications for which stable electrical contacts are of extreme importance. Pt/Si multilayered metallisations were compared to conventional Pt ones in order to investigate the effect of excess Si to the metal/SiC interface and the possible improvements in the thermal stability. These contacts were annealed up to 750°C. Their electrical behaviour was analysed by I-V measurements while the interface between the metal system and the 3C-SiC surface was examined by transmission electron microscopy (TEM) and the formed phases were determined by X-ray diffraction (XRD).

Original languageEnglish
Pages (from-to)406-410
Number of pages5
JournalMaterials Science and Engineering B
Volume61-62
Publication statusPublished - Jul 30 1999

Fingerprint

electric contacts
Metals
Stacking faults
temperature sensors
Temperature sensors
Metallizing
Dislocations (crystals)
crystal defects
metals
Thermodynamic stability
thermal stability
Transmission electron microscopy
X ray diffraction
transmission electron microscopy
diffraction
x rays

Keywords

  • Multilayer metallisation
  • Platinum
  • Schottky contacts
  • Silicon carbide
  • TEM
  • XRD

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Constantinidis, G., Pécz, B., Tsagaraki, K., Kayambaki, M., & Michelakis, K. (1999). Improvements in Pt-based Schottky contacts to 3C-SiC. Materials Science and Engineering B, 61-62, 406-410.

Improvements in Pt-based Schottky contacts to 3C-SiC. / Constantinidis, G.; Pécz, B.; Tsagaraki, K.; Kayambaki, M.; Michelakis, K.

In: Materials Science and Engineering B, Vol. 61-62, 30.07.1999, p. 406-410.

Research output: Contribution to journalArticle

Constantinidis, G, Pécz, B, Tsagaraki, K, Kayambaki, M & Michelakis, K 1999, 'Improvements in Pt-based Schottky contacts to 3C-SiC', Materials Science and Engineering B, vol. 61-62, pp. 406-410.
Constantinidis G, Pécz B, Tsagaraki K, Kayambaki M, Michelakis K. Improvements in Pt-based Schottky contacts to 3C-SiC. Materials Science and Engineering B. 1999 Jul 30;61-62:406-410.
Constantinidis, G. ; Pécz, B. ; Tsagaraki, K. ; Kayambaki, M. ; Michelakis, K. / Improvements in Pt-based Schottky contacts to 3C-SiC. In: Materials Science and Engineering B. 1999 ; Vol. 61-62. pp. 406-410.
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