Improvements in Ga2O3 sensors for reducing gases

M. Fleischer, H. Meixner

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Semiconducting Ga2O3 thin films represent a promising option as a base material for implementing stable sensors for reducing gases. They can be used at temperatures of up to 600 °C and above. For the first time, investigations look at how finely distributed catalyst dispersions (Pt, Pd) affect the gas sensitivity of the catalytically inactive Ga2O3 sensor. Various methods for producing the catalyst dispersion are compared. Basic investigations examine the sensor behaviour using one reducing gas in inert carrier gas: platinum dispersions yield a drastic reduction of response time in CO sensing (600 °C), whereas a significant increase of H2 sensitivity is obtained at low temperatures (300 °C). Measurement taken in air show that the sensitivities to different reducing gases may definitely be changed.

Original languageEnglish
Pages (from-to)259-263
Number of pages5
JournalSensors and Actuators: B. Chemical
Volume13
Issue number1-3
DOIs
Publication statusPublished - May 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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