Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques

S. S. Lau, S. Matteson, J. W. Mayer, P. Revesz, J. Gyulai, J. Roth, T. W. Sigmon, T. Cass

Research output: Contribution to journalArticle

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Abstract

We demonstrate that the crystalline quality of Si layers grown on sapphire substrate (SOS) by the CVD method can be greatly improved through the use of implantation of Si ions and subsequent thermal annealing at relatively low temperatures (∼550°C). This method utilizes an amorphous layer created by ion implantation near the sapphire/Si interface. Subsequent regrowth of this amorphous layer starting from the relatively perfect Si surface region leads to a much improved Si crystalline layer, as evidenced by MeV 4He + channeling and TEM measurements. When the implantation-formed amorphous layer is located at the outer portion of the Si layer, thermal annealing leads to only a small reduction in the amount of defects in the regrown layer as compared to the unimplanted sample. In these layers, epitaxial regrowth occurs with the same rate and activation energy observed in self-ion-implanted 〈100〉 Si.

Original languageEnglish
Pages (from-to)76-78
Number of pages3
JournalApplied Physics Letters
Volume34
Issue number1
DOIs
Publication statusPublished - 1979

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ion implantation
implantation
sapphire
annealing
ions
vapor deposition
activation energy
transmission electron microscopy
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques. / Lau, S. S.; Matteson, S.; Mayer, J. W.; Revesz, P.; Gyulai, J.; Roth, J.; Sigmon, T. W.; Cass, T.

In: Applied Physics Letters, Vol. 34, No. 1, 1979, p. 76-78.

Research output: Contribution to journalArticle

Lau, SS, Matteson, S, Mayer, JW, Revesz, P, Gyulai, J, Roth, J, Sigmon, TW & Cass, T 1979, 'Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques', Applied Physics Letters, vol. 34, no. 1, pp. 76-78. https://doi.org/10.1063/1.90564
Lau, S. S. ; Matteson, S. ; Mayer, J. W. ; Revesz, P. ; Gyulai, J. ; Roth, J. ; Sigmon, T. W. ; Cass, T. / Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques. In: Applied Physics Letters. 1979 ; Vol. 34, No. 1. pp. 76-78.
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