Improved ni ohmic contact on n-type 4H-SiC

C. Hallin, R. Yakimova, B. Pécz, A. Georgieva, T. S. Marinova, L. Kasamakova, R. Kakanakov, E. Janzén

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

This paper presents the structural, chemical and electronic properties of Al/Ni/ Al-layers evaporated on 4H silicon carbide and then annealed at 1000 °C for 5 min. The structure was investigated before and after annealing by transmission electron spectroscopy from cross-sectional specimens. With x-ray photoelectron spectroscopy, both element distribution and bonding energies were followed during sputtering through the alloyed metal-semiconductor contact. Voids are found in both annealed Ni/4H-SiC and Al/Ni/Al/4H-SiC contact layers, though closer to the metal-semiconductor interface in the former case. The first aluminum-layer is believed to prevent voids to be formed at the interface and also to reduce the oxide on the semiconductor surface. The contact was found to be ohmic with a specific contact resistance ρ c = 1.8 ×x 10 -5 ωcm 2 which is more than three times lower Ρ c than for the ordinary Ni/4H-SiC contact prepared in the same way.

Original languageEnglish
Pages (from-to)119-122
Number of pages4
JournalJournal of Electronic Materials
Volume26
Issue number3
DOIs
Publication statusPublished - 1997

Fingerprint

Ohmic contacts
electric contacts
Semiconductor materials
voids
Metals
Electron spectroscopy
Contact resistance
Photoelectron spectroscopy
contact resistance
Aluminum
Silicon carbide
silicon carbides
chemical properties
Electronic properties
metals
Oxides
Chemical properties
x ray spectroscopy
Sputtering
electron spectroscopy

Keywords

  • Al/Ni/Al/4H-SiC
  • Transmission electron microscopy
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Hallin, C., Yakimova, R., Pécz, B., Georgieva, A., Marinova, T. S., Kasamakova, L., ... Janzén, E. (1997). Improved ni ohmic contact on n-type 4H-SiC. Journal of Electronic Materials, 26(3), 119-122. https://doi.org/10.1007/s11664-997-0136-2

Improved ni ohmic contact on n-type 4H-SiC. / Hallin, C.; Yakimova, R.; Pécz, B.; Georgieva, A.; Marinova, T. S.; Kasamakova, L.; Kakanakov, R.; Janzén, E.

In: Journal of Electronic Materials, Vol. 26, No. 3, 1997, p. 119-122.

Research output: Contribution to journalArticle

Hallin, C, Yakimova, R, Pécz, B, Georgieva, A, Marinova, TS, Kasamakova, L, Kakanakov, R & Janzén, E 1997, 'Improved ni ohmic contact on n-type 4H-SiC', Journal of Electronic Materials, vol. 26, no. 3, pp. 119-122. https://doi.org/10.1007/s11664-997-0136-2
Hallin C, Yakimova R, Pécz B, Georgieva A, Marinova TS, Kasamakova L et al. Improved ni ohmic contact on n-type 4H-SiC. Journal of Electronic Materials. 1997;26(3):119-122. https://doi.org/10.1007/s11664-997-0136-2
Hallin, C. ; Yakimova, R. ; Pécz, B. ; Georgieva, A. ; Marinova, T. S. ; Kasamakova, L. ; Kakanakov, R. ; Janzén, E. / Improved ni ohmic contact on n-type 4H-SiC. In: Journal of Electronic Materials. 1997 ; Vol. 26, No. 3. pp. 119-122.
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