Improved depth resolution of channeling measurements in Rutherford backscattering by a detector tilt

G. Mezey, E. Kotai, T. Lohner, T. Nagy, J. Gyulai, A. Manuaba

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

An optimized geometry for Rutherford scattering and channeling is described giving an enhanced depth resolution (40-50 Å). Tis resolution was achieved by a second particle detector mounted at such an angle that it would accept scattered ions emerging at glancing angles only (tilted detector). The method was shown to bring advantages of regular RBS (easy to find major channels) and glancing angle geometry (≈ tenfold enhanced depth resolution, but restricted possibility to align the crystal) to a useful compromise in investigating thin disordered structures on single crystals or, say, depth dependence of lattice location, of foreign atoms. Comparative spectra on annealing of lattice detects and location of implanted Sb in Si are presented.

Original languageEnglish
Pages (from-to)235-237
Number of pages3
JournalNuclear Instruments and Methods
Volume149
Issue number1-3
DOIs
Publication statusPublished - 1978

Fingerprint

Rutherford backscattering spectroscopy
Ions
Detectors
Particle detectors
Geometry
Crystal lattices
Single crystals
Scattering
Annealing
Atoms
Crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Improved depth resolution of channeling measurements in Rutherford backscattering by a detector tilt. / Mezey, G.; Kotai, E.; Lohner, T.; Nagy, T.; Gyulai, J.; Manuaba, A.

In: Nuclear Instruments and Methods, Vol. 149, No. 1-3, 1978, p. 235-237.

Research output: Contribution to journalArticle

@article{5da891594013491eb36173db17f243cc,
title = "Improved depth resolution of channeling measurements in Rutherford backscattering by a detector tilt",
abstract = "An optimized geometry for Rutherford scattering and channeling is described giving an enhanced depth resolution (40-50 {\AA}). Tis resolution was achieved by a second particle detector mounted at such an angle that it would accept scattered ions emerging at glancing angles only (tilted detector). The method was shown to bring advantages of regular RBS (easy to find major channels) and glancing angle geometry (≈ tenfold enhanced depth resolution, but restricted possibility to align the crystal) to a useful compromise in investigating thin disordered structures on single crystals or, say, depth dependence of lattice location, of foreign atoms. Comparative spectra on annealing of lattice detects and location of implanted Sb in Si are presented.",
author = "G. Mezey and E. Kotai and T. Lohner and T. Nagy and J. Gyulai and A. Manuaba",
year = "1978",
doi = "10.1016/0029-554X(78)90866-2",
language = "English",
volume = "149",
pages = "235--237",
journal = "Nuclear Instruments and Methods",
issn = "0029-554X",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Improved depth resolution of channeling measurements in Rutherford backscattering by a detector tilt

AU - Mezey, G.

AU - Kotai, E.

AU - Lohner, T.

AU - Nagy, T.

AU - Gyulai, J.

AU - Manuaba, A.

PY - 1978

Y1 - 1978

N2 - An optimized geometry for Rutherford scattering and channeling is described giving an enhanced depth resolution (40-50 Å). Tis resolution was achieved by a second particle detector mounted at such an angle that it would accept scattered ions emerging at glancing angles only (tilted detector). The method was shown to bring advantages of regular RBS (easy to find major channels) and glancing angle geometry (≈ tenfold enhanced depth resolution, but restricted possibility to align the crystal) to a useful compromise in investigating thin disordered structures on single crystals or, say, depth dependence of lattice location, of foreign atoms. Comparative spectra on annealing of lattice detects and location of implanted Sb in Si are presented.

AB - An optimized geometry for Rutherford scattering and channeling is described giving an enhanced depth resolution (40-50 Å). Tis resolution was achieved by a second particle detector mounted at such an angle that it would accept scattered ions emerging at glancing angles only (tilted detector). The method was shown to bring advantages of regular RBS (easy to find major channels) and glancing angle geometry (≈ tenfold enhanced depth resolution, but restricted possibility to align the crystal) to a useful compromise in investigating thin disordered structures on single crystals or, say, depth dependence of lattice location, of foreign atoms. Comparative spectra on annealing of lattice detects and location of implanted Sb in Si are presented.

UR - http://www.scopus.com/inward/record.url?scp=0000908290&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000908290&partnerID=8YFLogxK

U2 - 10.1016/0029-554X(78)90866-2

DO - 10.1016/0029-554X(78)90866-2

M3 - Article

AN - SCOPUS:0000908290

VL - 149

SP - 235

EP - 237

JO - Nuclear Instruments and Methods

JF - Nuclear Instruments and Methods

SN - 0029-554X

IS - 1-3

ER -