Implantation-induced structural changes in evaporated amorphous Ge

Gábor Petö, Zsolt F. Horváth, Orsolya Gereben, László Pusztai, Ferenc Hajdú, Erzsébet Sváb

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Abstract

The short-range structure of amorphous germanium in the as-evaporated state and after Sb-ion implantation was investigated by x-ray diffraction. Significant changes were detected in the structure factors of the two specimens. Reverse Monte Carlo analyses of both data were carried out. An increase of 12-15 % in the atomic number density due to implantation was established. The diffraction data are consistent both with an atomic arrangement where the originally defective structure becomes nearly perfect as a consequence of the ion bombardment, or with the formation of a new phase of a-Ge with an average first coordination number higher than 4.

Original languageEnglish
Pages (from-to)539-542
Number of pages4
JournalPhysical Review B
Volume50
Issue number1
DOIs
Publication statusPublished - Jan 1 1994

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ASJC Scopus subject areas

  • Condensed Matter Physics

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