Impedance spectroscopic study of β-Ga2O3/O2 interaction

G. Kiss, I. V. Perczel, M. Fleischer, F. Réti, H. Meixner, J. Giber

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Impedance spectroscopy was used to study the oxygen/oxide-semiconductor interaction mechanism using sputtered β-Ga2O3/SiO2/Al2O3 and β-Ga2O3/BeO thin-layer sensor structures between 578 and 850°C. The total sample resistance was composed of its bulk (Rb) and its grain boundary resistance (Rgb). While for the β-Ga2O3/BeO sample Rgb is dominant in the entire temperature range, for the β-Ga2O3/SiO2/Al2O3 structure at higher temperatures it roughly equals Rb. The adsorption of oxygen influenced rather the grain boundary resistance than the bulk resistance. The oxygen sensitivity of β-Ga2O3 proved to be frequency dependent; applying a certain frequency it exceeded the dc sensitivity.

Original languageEnglish
Pages (from-to)2357-2359
Number of pages3
JournalJournal of the Electrochemical Society
Volume146
Issue number6
DOIs
Publication statusPublished - Jun 1999

Fingerprint

impedance
Oxygen
Grain boundaries
oxygen
grain boundaries
Beam plasma interactions
interactions
sensitivity
Spectroscopy
Adsorption
Temperature
Sensors
adsorption
oxides
sensors
spectroscopy
temperature
Oxide semiconductors

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Kiss, G., Perczel, I. V., Fleischer, M., Réti, F., Meixner, H., & Giber, J. (1999). Impedance spectroscopic study of β-Ga2O3/O2 interaction. Journal of the Electrochemical Society, 146(6), 2357-2359. https://doi.org/10.1149/1.1391940

Impedance spectroscopic study of β-Ga2O3/O2 interaction. / Kiss, G.; Perczel, I. V.; Fleischer, M.; Réti, F.; Meixner, H.; Giber, J.

In: Journal of the Electrochemical Society, Vol. 146, No. 6, 06.1999, p. 2357-2359.

Research output: Contribution to journalArticle

Kiss, G, Perczel, IV, Fleischer, M, Réti, F, Meixner, H & Giber, J 1999, 'Impedance spectroscopic study of β-Ga2O3/O2 interaction', Journal of the Electrochemical Society, vol. 146, no. 6, pp. 2357-2359. https://doi.org/10.1149/1.1391940
Kiss, G. ; Perczel, I. V. ; Fleischer, M. ; Réti, F. ; Meixner, H. ; Giber, J. / Impedance spectroscopic study of β-Ga2O3/O2 interaction. In: Journal of the Electrochemical Society. 1999 ; Vol. 146, No. 6. pp. 2357-2359.
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