Impedance spectroscopic and secondary ion mass spectrometric studies of β-Ga2O3/O2 interaction

G. Kiss, O. H. Krafcsik, K. Kovács, K. Josepovits, M. Fleischer, H. Meixner, P. Deák, F. Réti

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In the present work the impedance spectroscopy and secondary ion mass spectrometry (SIMS) were used to study the oxygen/β-Ga2O3 interaction between 578 and 835°C. The overall resistance of the β-Ga2O3 is composed of the bulk resistance and the grain boundary resistance. If oxygen is present, dominantly the characteristics of the space charge region - formed at the grain boundaries - change. The mechanism of the bulk conduction is unchanged between 578 and 835°C, however, the processes determining the grain boundary resistance are different above and below ∼700°C. At low temperatures the formation and adsorption of O2- ions is probable, while at higher temperatures the presence of O- ions is dominant on the grain boundaries.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalThin Solid Films
Volume391
Issue number2
DOIs
Publication statusPublished - Jul 16 2001

Fingerprint

Grain boundaries
grain boundaries
impedance
Ions
ions
interactions
Oxygen
oxygen
Secondary ion mass spectrometry
Electric space charge
secondary ion mass spectrometry
space charge
Spectroscopy
Adsorption
conduction
Temperature
adsorption
spectroscopy

Keywords

  • β-GaO
  • Impedance spectroscopy
  • Oxygen
  • Secondary ion mass spectrometry
  • Sensor

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Impedance spectroscopic and secondary ion mass spectrometric studies of β-Ga2O3/O2 interaction. / Kiss, G.; Krafcsik, O. H.; Kovács, K.; Josepovits, K.; Fleischer, M.; Meixner, H.; Deák, P.; Réti, F.

In: Thin Solid Films, Vol. 391, No. 2, 16.07.2001, p. 239-242.

Research output: Contribution to journalArticle

Kiss, G. ; Krafcsik, O. H. ; Kovács, K. ; Josepovits, K. ; Fleischer, M. ; Meixner, H. ; Deák, P. ; Réti, F. / Impedance spectroscopic and secondary ion mass spectrometric studies of β-Ga2O3/O2 interaction. In: Thin Solid Films. 2001 ; Vol. 391, No. 2. pp. 239-242.
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AU - Josepovits, K.

AU - Fleischer, M.

AU - Meixner, H.

AU - Deák, P.

AU - Réti, F.

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