Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm2, we observed carrier heating and impact ionization dynamics. The number of carriers produced exceeds 10 16 cm-3, corresponding to a change in carrier density ΔN/N of 700% at 80 K. The onset of a well-defined absorption peak at 1.2 THz is an indication of changes in longitudinal optical (LO) and longitudinal acoustic (LA) phonon populations due to cooling of the hot electrons.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Apr 1 2009|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics