Impact ionization in InSb probed by terahertz pump-terahertz probe spectroscopy

Matthias C. Hoffmann, János Hebling, Harold Y. Hwang, Ka Lo Yeh, Keith A. Nelson

Research output: Contribution to journalArticle

189 Citations (Scopus)

Abstract

Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm2, we observed carrier heating and impact ionization dynamics. The number of carriers produced exceeds 10 16 cm-3, corresponding to a change in carrier density ΔN/N of 700% at 80 K. The onset of a well-defined absorption peak at 1.2 THz is an indication of changes in longitudinal optical (LO) and longitudinal acoustic (LA) phonon populations due to cooling of the hot electrons.

Original languageEnglish
Article number161201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number16
DOIs
Publication statusPublished - Apr 1 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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