II-VI Semiconductor epilayers grown by mbe on III-V semiconductor substrates

A. Bosacchi, S. Franchi, P. Allegri, V. Avanzini, C. Frigeri

Research output: Contribution to journalArticle

1 Citation (Scopus)


The MBE growth and characterization of undoped and In-doped, low resistivity Cd1-xZnxS (O ≤ x ≤ 0.35) epilayers on (111) GaAs and of CdS on (110) InP are reported. Low resistivity (9 × 10-3 -8 × 10-2 Ω·cm) Cd1-xZnxS layers have been obtained up to x = 0.20. Solar conversion efficiencies at AM2 of 1.5, 5.5 and 13% have been obtained for AR-uncoated CdS/GaAs, Cd1-xZnx S/GaAs and CdS/InP hetero-structures, respectively, showing that the lattice mismatch affects the electrical and photovoltaic behaviour of the hetero-junctions. The results suggest that MBE is a suitable technology for preparing low resistivity Cd1-xZnxS layers and high efficiency CdS/InP solar cells.

Original languageEnglish
Pages (from-to)179-187
Number of pages9
JournalMaterials Chemistry and Physics
Issue number1-3
Publication statusPublished - Sep 1983

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'II-VI Semiconductor epilayers grown by mbe on III-V semiconductor substrates'. Together they form a unique fingerprint.

  • Cite this