Identification of vacancies on each sublattice of SiC by coincident Doppler broadening of the positron annihilation photons after electron irradiation

M. A. Müller, A. A. Rempel, K. Reichle, W. Sprengel, J. Major, H. E. Schaefer

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In the present contribution vacancies on the two sublattices of silicon carbide (6H-SiC) as selectively induced by electron irradiation are specifically identified by coincident Doppler broadening measurements of the positron-electron annihilation photons and by positron lifetime measurements. The vacancies induced by 0.35 MeV electron irradiation are characterized by Si nearest neighbors, as deduced from the increased annihilation probability with Si core electrons. These vacancies are therefore located on the C sublattice. They exhibit a positron lifetime of 160 ps as suggested theoretically. In contrast to that, the vacancies by which the positrons are trapped after 2.5 MeV electron irradiation have carbon atoms as nearest neighbors and are, therefore, located on the Si sublattice with a substantially higher positron lifetime of 210 ps.

Original languageEnglish
Pages (from-to)70-72
Number of pages3
JournalMaterials Science Forum
Volume363-365
Publication statusPublished - 2001

Fingerprint

Positron annihilation
Electron irradiation
Doppler effect
Positrons
electron irradiation
positron annihilation
sublattices
Vacancies
positrons
Photons
photons
life (durability)
silicon carbides
Electrons
Silicon carbide
Carbon
carbon
Atoms
atoms
electrons

Keywords

  • Coincident Doppler broadening
  • Lattice vacancy
  • Positron annihilation
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Identification of vacancies on each sublattice of SiC by coincident Doppler broadening of the positron annihilation photons after electron irradiation. / Müller, M. A.; Rempel, A. A.; Reichle, K.; Sprengel, W.; Major, J.; Schaefer, H. E.

In: Materials Science Forum, Vol. 363-365, 2001, p. 70-72.

Research output: Contribution to journalArticle

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AU - Müller, M. A.

AU - Rempel, A. A.

AU - Reichle, K.

AU - Sprengel, W.

AU - Major, J.

AU - Schaefer, H. E.

PY - 2001

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AB - In the present contribution vacancies on the two sublattices of silicon carbide (6H-SiC) as selectively induced by electron irradiation are specifically identified by coincident Doppler broadening measurements of the positron-electron annihilation photons and by positron lifetime measurements. The vacancies induced by 0.35 MeV electron irradiation are characterized by Si nearest neighbors, as deduced from the increased annihilation probability with Si core electrons. These vacancies are therefore located on the C sublattice. They exhibit a positron lifetime of 160 ps as suggested theoretically. In contrast to that, the vacancies by which the positrons are trapped after 2.5 MeV electron irradiation have carbon atoms as nearest neighbors and are, therefore, located on the Si sublattice with a substantially higher positron lifetime of 210 ps.

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