In this paper we determine the parameters of LOC type AlGaAs laser heterostructures in order to find the reasons of their deficient functioning. The methods of characterization are as follows:- broad-area laser test; - scanning electron microscopy of selective etched sample; - contact resistance profiling; - optical microscopy of an angle-lapped, anodized sample; - electrochemical C-V profiling. Reasons for relatively high threshold current densities found by the broad-area laser test are suggested. Comparison of results, as well as some advantages and disadvantages of the foregoing methods are discussed. In our case the optical microscopy identifies most clearly the origin of the deficient functioning, the other techniques seem to be inadequate. This result shows the importance of this simple tool for a quick analysis of the LPE grown laser structures.
ASJC Scopus subject areas
- Physics and Astronomy(all)