Identification of the carbon antisite-vacancy pair in 4H-SiC

T. Umeda, N. T. Son, J. Isoya, E. Janzén, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. Bockstedte

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.

Original languageEnglish
Article number145501
JournalPhysical Review Letters
Volume96
Issue number14
DOIs
Publication statusPublished - 2006

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carbon
metastable state
electron paramagnetic resonance
purity
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Umeda, T., Son, N. T., Isoya, J., Janzén, E., Ohshima, T., Morishita, N., ... Bockstedte, M. (2006). Identification of the carbon antisite-vacancy pair in 4H-SiC. Physical Review Letters, 96(14), [145501]. https://doi.org/10.1103/PhysRevLett.96.145501

Identification of the carbon antisite-vacancy pair in 4H-SiC. / Umeda, T.; Son, N. T.; Isoya, J.; Janzén, E.; Ohshima, T.; Morishita, N.; Itoh, H.; Gali, A.; Bockstedte, M.

In: Physical Review Letters, Vol. 96, No. 14, 145501, 2006.

Research output: Contribution to journalArticle

Umeda, T, Son, NT, Isoya, J, Janzén, E, Ohshima, T, Morishita, N, Itoh, H, Gali, A & Bockstedte, M 2006, 'Identification of the carbon antisite-vacancy pair in 4H-SiC', Physical Review Letters, vol. 96, no. 14, 145501. https://doi.org/10.1103/PhysRevLett.96.145501
Umeda T, Son NT, Isoya J, Janzén E, Ohshima T, Morishita N et al. Identification of the carbon antisite-vacancy pair in 4H-SiC. Physical Review Letters. 2006;96(14). 145501. https://doi.org/10.1103/PhysRevLett.96.145501
Umeda, T. ; Son, N. T. ; Isoya, J. ; Janzén, E. ; Ohshima, T. ; Morishita, N. ; Itoh, H. ; Gali, A. ; Bockstedte, M. / Identification of the carbon antisite-vacancy pair in 4H-SiC. In: Physical Review Letters. 2006 ; Vol. 96, No. 14.
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