Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide

Viktor Ivády, Joel Davidsson, Nguyen Tien Son, Takeshi Ohshima, Igor A. Abrikosov, Adam Gali

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The identification of a microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon-vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett. 115, 247602 (2015)PRLTAO0031-900710.1103/PhysRevLett.115.247602], are still argued as an origin. By means of high-precision first-principles calculations and high-resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room-temperature optical readout.

Original languageEnglish
Article number161114
JournalPhysical Review B
Volume96
Issue number16
DOIs
Publication statusPublished - Oct 27 2017

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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