Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC

T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, A. Gali

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

An antisite-vacancy pair and a monovacancy are a set of fundamental stable and/or metastable defects in compound semiconductors. Theory predicted that carbon antisite-vacancy pairs would be much more stable in p -type SiC than silicon vacancies and that they would be a common defect. However, no experimental evidence has yet supported this prediction. We reexamine electron-irradiated p -type 4H-SiC and identify the positively charged carbon antisite-vacancy pairs (CSi VC+) by means of electron paramagnetic resonance and ab initio calculations. We compare them with other coexisting defects such as carbon vacancy (VC) and divacancy (VSi VC) and show that CSi VC and VC are very similar in terms of thermal stability and electronic levels.

Original languageEnglish
Article number245202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number24
DOIs
Publication statusPublished - Jun 7 2007

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Vacancies
Carbon
carbon
Defects
defects
electronic levels
Silicon
Paramagnetic resonance
electron paramagnetic resonance
Thermodynamic stability
thermal stability
Semiconductor materials
Electrons
silicon
predictions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC. / Umeda, T.; Ishoya, J.; Ohshima, T.; Morishita, N.; Itoh, H.; Gali, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 24, 245202, 07.06.2007.

Research output: Contribution to journalArticle

Umeda, T. ; Ishoya, J. ; Ohshima, T. ; Morishita, N. ; Itoh, H. ; Gali, A. / Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC. In: Physical Review B - Condensed Matter and Materials Physics. 2007 ; Vol. 75, No. 24.
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