Identification of model parameters of the photovoltaic solar cells

Dani Rusirawan, István Farkas

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

Presently, many equivalent circuit models have been developed and proposed to describe the photovoltaic (PV) cell's characteristics, and the most commonly used are single and double diode models. In a single diode model, a complete characteristic of a PV cell's can be described by five model parameters i.e.: light generated current, leakage or reverse saturation current, diode quality factor, series resistance and shunt resistance. Light generated current and reverse saturation current can be said as external influences meanwhile the others are internal influences. Accuracy of the PV system modelling is depending on the correct calculation of the internal influences. A research preliminary in order to identify internal influences have been performed and will be presented in this paper. As a research subject, polycrystalline silicon (wafer based crystalline silicon technology) and amorphous silicon (thin film technology) modules, as components of grid-connected PV array system at Szent István University (SZIU), were used under Gödöllo climatic conditions. As an initial step, simulation results based on software packages (associated with the PV characteristics) and some calculation methods to identify internal influences are shown here. As a long term outcome of this research, internal parameters of both modules can be predicted, and furthermore PV cell's model for both modules can be developed.

Original languageEnglish
Pages (from-to)39-46
Number of pages8
JournalEnergy Procedia
Volume57
DOIs
Publication statusPublished - Jan 1 2014
Event2013 ISES Solar World Congress, SWC 2013 - Cancun, Mexico
Duration: Nov 3 2013Nov 7 2013

Keywords

  • Diode quality factor
  • Polycrystalline and amorphous silicon
  • Series resistance
  • Shunt resistance
  • Single diode model

ASJC Scopus subject areas

  • Energy(all)

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