Identification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches

Michel Bockstedte, A. Gali, Alexander Mattausch, Oleg Pankratov, John W. Steeds

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageEnglish
Title of host publicationSilicon Carbide
PublisherWiley-VCH
Pages115-145
Number of pages31
Volume1
ISBN (Print)9783527409532
DOIs
Publication statusPublished - Apr 28 2011

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Defects

Keywords

  • Defect aggregates
  • Experimental approaches
  • Intrinsic defects in SiC
  • Theoretical approaches
  • Vacancy aggregation
  • Vacancy-related defects

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Identification of Intrinsic Defects in SiC : Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches. / Bockstedte, Michel; Gali, A.; Mattausch, Alexander; Pankratov, Oleg; Steeds, John W.

Silicon Carbide. Vol. 1 Wiley-VCH, 2011. p. 115-145.

Research output: Chapter in Book/Report/Conference proceedingChapter

Bockstedte, Michel ; Gali, A. ; Mattausch, Alexander ; Pankratov, Oleg ; Steeds, John W. / Identification of Intrinsic Defects in SiC : Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches. Silicon Carbide. Vol. 1 Wiley-VCH, 2011. pp. 115-145
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