Identification of Intrinsic Defects in SiC

Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches

Michel Bockstedte, A. Gali, Alexander Mattausch, Oleg Pankratov, John W. Steeds

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageEnglish
Title of host publicationSilicon Carbide
PublisherWiley-VCH
Pages115-145
Number of pages31
Volume1
ISBN (Print)9783527409532
DOIs
Publication statusPublished - Apr 28 2011

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Defects

Keywords

  • Defect aggregates
  • Experimental approaches
  • Intrinsic defects in SiC
  • Theoretical approaches
  • Vacancy aggregation
  • Vacancy-related defects

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Identification of Intrinsic Defects in SiC : Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches. / Bockstedte, Michel; Gali, A.; Mattausch, Alexander; Pankratov, Oleg; Steeds, John W.

Silicon Carbide. Vol. 1 Wiley-VCH, 2011. p. 115-145.

Research output: Chapter in Book/Report/Conference proceedingChapter

Bockstedte, Michel ; Gali, A. ; Mattausch, Alexander ; Pankratov, Oleg ; Steeds, John W. / Identification of Intrinsic Defects in SiC : Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches. Silicon Carbide. Vol. 1 Wiley-VCH, 2011. pp. 115-145
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