Identification of divacancies in 4H-SiC

N. T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzén

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, VCVSi0. Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCSi2+), are related to the triplet ground states of the C3v/C1h configurations of VCVSi0.

Original languageEnglish
Pages (from-to)334-337
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - Apr 1 2006

Fingerprint

Paramagnetic resonance
electron paramagnetic resonance
Carbon
carbon
Excited states
Ground state
atomic energy levels
Vacancies
ground state
configurations

Keywords

  • Ab initio calculations
  • Divacancies
  • Electron paramagnetic resonance

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Son, N. T., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Magnusson, B., ... Janzén, E. (2006). Identification of divacancies in 4H-SiC. Physica B: Condensed Matter, 376-377(1), 334-337. https://doi.org/10.1016/j.physb.2005.12.086

Identification of divacancies in 4H-SiC. / Son, N. T.; Umeda, T.; Isoya, J.; Gali, A.; Bockstedte, M.; Magnusson, B.; Ellison, A.; Morishita, N.; Ohshima, T.; Itoh, H.; Janzén, E.

In: Physica B: Condensed Matter, Vol. 376-377, No. 1, 01.04.2006, p. 334-337.

Research output: Contribution to journalArticle

Son, NT, Umeda, T, Isoya, J, Gali, A, Bockstedte, M, Magnusson, B, Ellison, A, Morishita, N, Ohshima, T, Itoh, H & Janzén, E 2006, 'Identification of divacancies in 4H-SiC', Physica B: Condensed Matter, vol. 376-377, no. 1, pp. 334-337. https://doi.org/10.1016/j.physb.2005.12.086
Son NT, Umeda T, Isoya J, Gali A, Bockstedte M, Magnusson B et al. Identification of divacancies in 4H-SiC. Physica B: Condensed Matter. 2006 Apr 1;376-377(1):334-337. https://doi.org/10.1016/j.physb.2005.12.086
Son, N. T. ; Umeda, T. ; Isoya, J. ; Gali, A. ; Bockstedte, M. ; Magnusson, B. ; Ellison, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzén, E. / Identification of divacancies in 4H-SiC. In: Physica B: Condensed Matter. 2006 ; Vol. 376-377, No. 1. pp. 334-337.
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AU - Magnusson, B.

AU - Ellison, A.

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