Identification of divacancies in 4H-SiC

N. T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzén

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, VCVSi0. Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCSi2+), are related to the triplet ground states of the C3v/C1h configurations of VCVSi0.

Original languageEnglish
Pages (from-to)334-337
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005

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Keywords

  • Ab initio calculations
  • Divacancies
  • Electron paramagnetic resonance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Son, N. T., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Magnusson, B., Ellison, A., Morishita, N., Ohshima, T., Itoh, H., & Janzén, E. (2006). Identification of divacancies in 4H-SiC. Physica B: Condensed Matter, 376-377(1), 334-337. https://doi.org/10.1016/j.physb.2005.12.086