Identification of a frenkel-pair defect in electron-irradiated 3 C SiC

N. T. Son, E. Janzén, J. Isoya, N. Morishita, H. Hanaya, H. Takizawa, T. Ohshima, A. Gali

Research output: Contribution to journalArticle

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Abstract

An electron paramagnetic resonance (EPR) spectrum labeled LE1 was observed in n -type 3C SiC after electron irradiation at low temperatures (∼80-100 K). A hyperfine interaction with four nearest C neighbors similar to that of the well-known silicon vacancy in the negative charge state was observed, but the LE1 center has a lower symmetry, C2v. Supercell calculations of different configurations of silicon vacancy-interstitial Frenkel-pairs, VSi -Sii, were performed showing that pairs with a nearest neighbor Si interstitial are unstable- VSi and Sii will automatically recombine-whereas pairs with a second neighbor Sii are stable. Comparing the data obtained from EPR and supercell calculations, the LE1 center is assigned to the Frenkel-pair between VSi and a second neighbor Sii interstitial along the [100] direction in the 3+ charge state, V Si - -Si i 4+. In addition, a path for the migration of Si i 4+ was found in 3C SiC. In samples irradiated at low temperatures, the LE1 Frenkel-pair was found to be the dominating defect whereas EPR signals of single vacancies were not detected. The center disappears after warming up the samples to room temperature.

Original languageEnglish
Article number125201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number12
DOIs
Publication statusPublished - Sep 2 2009

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Vacancies
Paramagnetic resonance
electron paramagnetic resonance
interstitials
Silicon
Defects
Electrons
defects
electrons
Electron irradiation
silicon
electron irradiation
Temperature
heating
symmetry
room temperature
configurations
interactions
Direction compound

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Identification of a frenkel-pair defect in electron-irradiated 3 C SiC. / Son, N. T.; Janzén, E.; Isoya, J.; Morishita, N.; Hanaya, H.; Takizawa, H.; Ohshima, T.; Gali, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 12, 125201, 02.09.2009.

Research output: Contribution to journalArticle

Son, N. T. ; Janzén, E. ; Isoya, J. ; Morishita, N. ; Hanaya, H. ; Takizawa, H. ; Ohshima, T. ; Gali, A. / Identification of a frenkel-pair defect in electron-irradiated 3 C SiC. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 80, No. 12.
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