ICP-AES detection of silicon carbide impurities volatilized in a graphite furnace with the use of carbon tetrachloride vapour

G. Záray, T. Kántor, Gerhard Wolff, Zdravka Zadgorska, Hubertus Nickel

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The analytical capability of high-temperature halogenation with carbon tetrachloride vapour in a graphite furnace was investigated for silicon carbide powder with known chemical composition and particle size. Intensity vs heating time curves were determined for analytical lines of Al, B, Ba, Ca, Cr, Cu, Fe, Mg, Mn, Ti, V and Si constituents, volatilized with and without the presence of CCl4 vapour in the furnace atmosphere. Igniting 10 mg SiC at 2100 °C for 60 s in chlorinating atmosphere, the evaporated fraction of most of the constituents was higher than 90% (for Al about 50%). The line intensity vs sample mass (4-26 mg) relationships were linear for all impurities studied, while the intensity of silicon line showed a relatively small change with the sample mass. BEC (background equivalent concentration) values for this solid sampling technique (10 mg loaded sample) were 2-20 fold lower than those calculated for the conventional solution sample introduction method.

Original languageEnglish
Pages (from-to)345-358
Number of pages14
JournalMikrochimica Acta
Volume107
Issue number3-6
DOIs
Publication statusPublished - May 1992

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Carbon Tetrachloride
Furnaces
Vapors
Halogenation
Impurities
Silicon
Powders
Particle size
Sampling
Heating
Chemical analysis
Temperature
silicon carbide

Keywords

  • electrothermal vaporization
  • halogenation
  • ICPAES
  • silicon carbide
  • solid sampling

ASJC Scopus subject areas

  • Analytical Chemistry

Cite this

ICP-AES detection of silicon carbide impurities volatilized in a graphite furnace with the use of carbon tetrachloride vapour. / Záray, G.; Kántor, T.; Wolff, Gerhard; Zadgorska, Zdravka; Nickel, Hubertus.

In: Mikrochimica Acta, Vol. 107, No. 3-6, 05.1992, p. 345-358.

Research output: Contribution to journalArticle

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AU - Wolff, Gerhard

AU - Zadgorska, Zdravka

AU - Nickel, Hubertus

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N2 - The analytical capability of high-temperature halogenation with carbon tetrachloride vapour in a graphite furnace was investigated for silicon carbide powder with known chemical composition and particle size. Intensity vs heating time curves were determined for analytical lines of Al, B, Ba, Ca, Cr, Cu, Fe, Mg, Mn, Ti, V and Si constituents, volatilized with and without the presence of CCl4 vapour in the furnace atmosphere. Igniting 10 mg SiC at 2100 °C for 60 s in chlorinating atmosphere, the evaporated fraction of most of the constituents was higher than 90% (for Al about 50%). The line intensity vs sample mass (4-26 mg) relationships were linear for all impurities studied, while the intensity of silicon line showed a relatively small change with the sample mass. BEC (background equivalent concentration) values for this solid sampling technique (10 mg loaded sample) were 2-20 fold lower than those calculated for the conventional solution sample introduction method.

AB - The analytical capability of high-temperature halogenation with carbon tetrachloride vapour in a graphite furnace was investigated for silicon carbide powder with known chemical composition and particle size. Intensity vs heating time curves were determined for analytical lines of Al, B, Ba, Ca, Cr, Cu, Fe, Mg, Mn, Ti, V and Si constituents, volatilized with and without the presence of CCl4 vapour in the furnace atmosphere. Igniting 10 mg SiC at 2100 °C for 60 s in chlorinating atmosphere, the evaporated fraction of most of the constituents was higher than 90% (for Al about 50%). The line intensity vs sample mass (4-26 mg) relationships were linear for all impurities studied, while the intensity of silicon line showed a relatively small change with the sample mass. BEC (background equivalent concentration) values for this solid sampling technique (10 mg loaded sample) were 2-20 fold lower than those calculated for the conventional solution sample introduction method.

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