IBA study of the growth mechanisms of very thin silicon oxide films

the effect of wafer cleaning

F. C. Stedile, I. J R Baumvol, J. J. Ganem, S. Rigo, I. Trimaille, G. Battistig, W. H. Schulte, H. W. Becker

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The growth mechanisms of very thin silicon oxide films formed during rapid thermal oxidation were studied using ion beam analysis and 18O isotopic tracing methods. In this paper we report on the effects of different cleaning procedures of silicon wafers prior to oxidation in dry oxygen (16O2 followed by 18O2) on the growth mechanisms and kinetics. Typical oxide thicknesses ranging from 0.2 to 10 nm were studied. The 18O and 16O isotopic profiles were determined by ion beam analysis methods, namely: the 18O(p, α)15N narrow resonance at 151 keV, and the 18O(p, α)15N and the 16O(d, p)17O reactions associated with step-by-step chemical dissolution. The profiles could be related to current theories on the initial stages of thermal growth of silicon oxide layers allowing us to draw some conclusions regarding the role of surface cleaning of the silicon wafers on the formation of silicon fragments in the volume of the very thin oxide layer. The influence of rapid thermal processing parameters like temperature, time and oxygen partial pressure on the growth mechanisms were also studied and discussed here.

Original languageEnglish
Pages (from-to)248-254
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume85
Issue number1-4
DOIs
Publication statusPublished - Mar 2 1994

Fingerprint

Silicon oxides
silicon oxides
cleaning
Oxide films
oxide films
Cleaning
wafers
Silicon wafers
Oxides
Ion beams
time temperature parameter
silicon
ion beams
Oxygen
Rapid thermal processing
Surface cleaning
Oxidation
oxidation
oxides
oxygen

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

IBA study of the growth mechanisms of very thin silicon oxide films : the effect of wafer cleaning. / Stedile, F. C.; Baumvol, I. J R; Ganem, J. J.; Rigo, S.; Trimaille, I.; Battistig, G.; Schulte, W. H.; Becker, H. W.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 85, No. 1-4, 02.03.1994, p. 248-254.

Research output: Contribution to journalArticle

Stedile, F. C. ; Baumvol, I. J R ; Ganem, J. J. ; Rigo, S. ; Trimaille, I. ; Battistig, G. ; Schulte, W. H. ; Becker, H. W. / IBA study of the growth mechanisms of very thin silicon oxide films : the effect of wafer cleaning. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1994 ; Vol. 85, No. 1-4. pp. 248-254.
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