I-V characterization of resonant tunneling diodes

L. Dozsa, Ferenc Riesz, Vo Van Tuyen, B. Szentpali, A. Muller

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The current-voltage characteristics of AlAs/GaAs resonant tunnelling diodes are measured in steady state circumstances and by a new method in the submicrosecond time scale. The results show that I-V characteristics are sensitive to the measuring time due to internal transient of the device. The internal transients are identified as thermal transients and as charge accumulation at the barriers and in localized electronic states. It is concluded that a reliable I-V characterization of these devices is possible only when the results measured by different methods is compared and analyzed properly.

Original languageEnglish
Pages653-656
Number of pages4
Publication statusPublished - Dec 1 1998
EventProceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2) - Sinaia, Romania
Duration: Oct 6 1998Oct 10 1998

Other

OtherProceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2)
CitySinaia, Romania
Period10/6/9810/10/98

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Dozsa, L., Riesz, F., Tuyen, V. V., Szentpali, B., & Muller, A. (1998). I-V characterization of resonant tunneling diodes. 653-656. Paper presented at Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2), Sinaia, Romania, .