Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers

C. Frigeri, M. Serényi, N. Q. Khánh, A. Csik, Z. Erdélyi, L. Nasi, D. L. Beke, H. G. Boyen

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A combined study of hydrogenated sputtered single a-Si and a-Ge layers and a-Si/a-Ge multilayers (MLs) has been carried out in order to establish the reasons of H release and associated structural degradation of the MLs when they are submitted to annealing. ERDA analysis of the single layers of a-Si and a-Ge shows that H escapes from the layer much more efficiently in a-Ge than in a-Si. This agrees with IR absorbance measurements on the MLs showing that the Ge-H signal disappears at a lower annealing time (for a given annealing temperature) than Si-H and Si-H2 do. The conclusion is drawn that the structural degradation of a-Si/a-Ge MLs primary starts with release of H in the Ge layers most probably because of the smaller binding energy of the H-Ge bond and the greater weakness of the Ge lattice.

Original languageEnglish
Pages (from-to)877-880
Number of pages4
JournalCrystal Research and Technology
Issue number8
Publication statusPublished - Aug 2011



  • annealing
  • hydrogenated a-Si/a-Ge
  • structure

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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